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UCC21750

ACTIVE

5.7kVrms ±10A, single-channel isolated gate driver w/ DESAT & internal miller clamp for IGBT/SiCFETs

Product details

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 5.7-kVRMS single channel isolated gate driver
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33-V maximum output drive voltage (VDD – VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200-ns response time fast DESAT protection
  • 4-A Internal active miller clamp
  • 400-mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable and disable response on RST/EN
  • Reject < 40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)
    • UL 1577 component recognition program
  • 5.7-kVRMS single channel isolated gate driver
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33-V maximum output drive voltage (VDD – VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200-ns response time fast DESAT protection
  • 4-A Internal active miller clamp
  • 400-mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable and disable response on RST/EN
  • Reject < 40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)
    • UL 1577 component recognition program

The UCC21750 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity (CMTI).

The UCC21750 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

The UCC21750 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity (CMTI).

The UCC21750 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

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UCC21710 ACTIVE 5.7kVrms ±10A, single-channel-isolated gate driver with OC detection, internal clamp for IGBT/SiC Supports internal Miller clamp; only supports Soft Turn-OFF
UCC21732 ACTIVE 5.7kVrms, ±10A single-channel isolated gate driver with 2-level turn off for IGBT/SiC FETs Supports external Miller clamp; supports two-level Soft Turn-OFF

Technical documentation

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Type Title Date
* Data sheet UCC21750 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI datasheet (Rev. C) PDF | HTML 12 Jan 2023
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 29 Feb 2024
Application brief Understanding the Short Circuit Protection for Silicon Carbide MOSFETs (Rev. C) PDF | HTML 08 Sep 2023
User guide UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for Wolfspeed 1200-V SiC 01 Sep 2023
Certificate UCC217xx/-Q1 CQC Certificate of Product Certification 07 Jun 2023
Technical article Misconceptions about EV charging PDF | HTML 24 Feb 2022
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 Dec 2021
Certificate FPPT2 - Nonoptical Isolating Devices UL 1577 Certificate of Compliance 26 Oct 2021
E-book Ein Techniker-Leitfaden für Industrieroboter-Designs 25 Mar 2020
E-book E-book: An engineer’s guide to industrial robot designs 12 Feb 2020
Application note Performance of the Analog PWM Channel in Smart Gate Drivers 16 Jan 2020
Design guide SiC/IGBT Isolated Gate Driver Reference Design With Thermal Diode and Sensing 18 Dec 2019
User guide UCC217xx Family Driving and Protecting SiC and IGBT Power Modules and Transistor (Rev. B) 09 Sep 2019
Technical article Searching for the newest innovations in power? Find them at APEC PDF | HTML 09 Feb 2019
Application brief Why is high UVLO important for safe IGBT & SiC MOSFET power switch operation 30 Jan 2019

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC21750QDWEVM-025 — Driving and protection evaluation board for SiC and IGBT transistors and power modules

The UCC21750QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, desat feature based protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms (...)
User guide: PDF
Not available on TI.com
Evaluation board

UCC21750QDWEVM-054 — UCC21750 evaluation module for Wolfspeed® 1200-V SiC platforms

The UCC21750QDWEVM-054 is a compact half-bridge gate driver evaluation module consisting of two single-channel isolated gate drivers. The evaluation module provides supply voltage, drive, protection and monitoring needed for driving several different models of Wolfspeed® (...)

User guide: PDF
Not available on TI.com
Simulation model

UCC21750 PSpice Transient Model

SLUM680.ZIP (90 KB) - PSpice Model
Simulation model

UCC21750 TINA-TI Reference Design

SLUM887.TSC (2184 KB) - TINA-TI Reference Design
Simulation model

UCC21750 Unencrypted PSPICE Transient Model

SLUM718.ZIP (6 KB) - PSpice Model
Simulation model

UCC21750DWR PSPICE Model

SLUM736.ZIP (6 KB) - PSpice Model
Calculation tool

SLUC695 UCC217xx XL Calculator Tool

Supported products & hardware

Supported products & hardware

Products
Isolated gate drivers
UCC21710-Q1 Automotive 5.7kVrms 10A single-channel isolated gate driver with overcurrent protection for IGBT/SiC UCC21732-Q1 Automotive 5.7-kVrms ±10A single-channel isolated gate driver with 2-level turn off for IGBT/SiCFETs UCC21736-Q1 Automotive 5.7kVrms, ±10A isolated single-channel gate driver with active short circuit for IGBT/SiC UCC21739-Q1 Automotive 3kVrms, ±10A single-channel isolated gate driver w/ isolated analog sensing for IGBT/SiC UCC21750 5.7kVrms ±10A, single-channel isolated gate driver w/ DESAT & internal miller clamp for IGBT/SiCFETs UCC21750-Q1 Automotive 5.7kVrms, ±10A single-channel isolated gate driver w/ DESAT & internal clamp for IGBT/SiC UCC21759-Q1 Automotive 3.0kVrms, ±10A single-channel isolated gate driver w/ DESAT & internal clamp for IGBT/SiC
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

PMP23223 — Smart isolated gate driver with bias supply reference design

This reference design demonstrates the combination of UCC21732 gate driver with a UCC14xxx series bias supply. This design can be used to drive a variety of power switches, including connecting directly to a Wolfspeed Silicon Carbide (SiC) field-effect transistor (FET) module. This reference design (...)
Test report: PDF
Reference designs

TIDA-01599 — TÜV SÜD-assessed safe torque off (STO) reference design for industrial drives (IEC 61800-5-2)

This reference design outlines a safe torque off (STO) subsystem for a three-phase inverter with CMOS input isolated IGBT gate drivers. The STO subsystem employs a dual-channel architecture (1oo2) with a hardware fault tolerance of 1 (HFT=1). It is implemented following a de-energize trip concept. (...)
Design guide: PDF
Schematic: PDF
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