The UCC27518 and UCC27519 single-channel, high-speed, low-side gate driver device can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27518 and UCC27519 can source and sink high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 17 ns.
The UCC27518 and UCC27519 provide 4-A source, 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.
The UCC27518 and UCC27519 are designed to operate over a wide VDD range of 4.5 V to 18 V and a wide temperature range of –40°C to 140°C. Internal under voltage lockout (UVLO) circuitry on the VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.
The input pin threshold of the UCC27518 and UCC27519 are based on CMOS logic where the threshold voltage is a function of the VDD supply voltage. Typically Input High Threshold (VIN-H) is 55% VDD and Input Low Threshold (VIN-L) is 39% VDD. Wide hysteresis (16% VDD typically) between the high and low thresholds offers excellent noise immunity and lets users introduce delays using RC circuits between the input PWM signal and the INx pin of the device.
The UCC27518 and UCC27519 also feature a floatable enable function on the EN pin. The EN pin can be left in a no connect condition, which allows pin-to-pin compatibility between the UCC27518, UCC27519 and the TPS2828, TPS2829, respectively. The thresholds of the EN pin is a fixed voltage threshold and does not vary based on VDD pin bias voltage. Typically, the Enable High Threshold (VEN-H) is 2.1 V and Enable Low Threshold (VEN-L) is 1.25 V.
| Type | Title | Date | ||
|---|---|---|---|---|
| * | Data sheet | UCC2751x Single-Channel, High-Speed, Low-Side Gate Driver (Based On CMOS Input Threshold With 4-A Peak Source and 4-A Peak Sink) datasheet (Rev. A) | PDF | HTML | 31 Dec 2014 |
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 28 Feb 2020 | ||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 28 Feb 2020 | ||
| More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 29 Oct 2018 | ||
| Selection guide | Power Management Guide 2018 (Rev. R) | 25 Jun 2018 | ||
| Application brief | Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole | 16 Mar 2018 |
For additional terms or required resources, click any title below to view the detail page where available.
| Package | Pins | Download |
|---|---|---|
| SOT-23 (DBV) | 5 | View options |
Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.
If you have questions about quality, packaging or ordering TI products, see TI support.