CSD13202Q2 N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max) | TI.com

CSD13202Q2 (ACTIVE)

N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max)

N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max) - CSD13202Q2
 

Description

This 12-V, 7.5-mΩ NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2 × 2 offers excellent thermal performance for the size of the package.

Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 2-mm × 2-mm Plastic Package

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
VGS (V)
VGSTH Typ (V)
ID, Silicon limited at Tc=25degC (A)
ID, package limited (A)
Logic Level
Rating
CSD13202Q2 CSD17313Q2 CSD17318Q2 CSD17571Q2
12     30     30     30    
Single     Single     Single     Single    
9.3     32     16.9     29    
      24    
76     20     68     39    
5.1     2.1     6     2.4    
0.76     0.4     1.3     0.6    
SON2x2     SON2x2     SON2x2     SON2x2    
9.1       20      
8     10     10     20    
0.8     1.3     0.9     1.6    
    25      
22     5     22     22    
Yes     Yes     Yes     Yes    
Catalog     Catalog     Catalog     Catalog