N-Channel NexFET™ Power MOSFET  - CSD13303W1015

CSD13303W1015 (ACTIVE)

N-Channel NexFET™ Power MOSFET

 

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

Features

  • Ultra Low on Resistance
  • Ultra Low Qg and Qgd
  • Small Footprint
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • CSP 1 × 1.5 mm Wafer Level Package

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
ID, Continuous Drain Current at Ta=25degC (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
Approx. Price (US$)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
RDS(on) Typ at VGS=4.5V (mOhm)
VGS (V)
VGSTH Typ (V)
CSD13303W1015
12   
Single   
20   
31   
3.5   
3.9   
0.4   
WLP 1.0x1.5   
0.14 | 1ku   
18   
16   
8   
0.85   

WEBENCH® NexFET Designer

Design your power supply using FETs from TI

Vin
Min
V
  Max
V
 
Output Vout
V
  Iout
A
Ambient Temp °C  
Multiple Loads
Single Output
FPGA Power Processor Power
All
Actel
Altera
Lattice
Xilinx
TI
All
Multiple Loads
Multiple Loads
 

Vin (V)
Min
Max
Op. Temperature °C
Optional Light Output (Lumens)