N-Channel NexFET™ Power MOSFET  - CSD13303W1015

CSD13303W1015 (ACTIVE)

N-Channel NexFET™ Power MOSFET

 

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

Features

  • Ultra Low on Resistance
  • Ultra Low Qg and Qgd
  • Small Footprint
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • CSP 1 × 1.5 mm Wafer Level Package

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Logic Level
Rds(on) Max at VGS=4.5V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
Configuration
Package (mm)
Rating
Approx. Price (US$)
QGD Typ (nC)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
RDS(on) Typ at VGS=4.5V (mOhm)
VGS (V)
VGSTH Typ (V)
ID, Continuous Drain Current at Ta=25degC (A)
CSD13303W1015
12   
Yes   
20   
31   
3.9   
Single   
WLP 1.0x1.5   
Catalog   
0.14 | 1ku   
0.4   
18   
16   
8   
0.85   
3.5   

Related end equipment

  • Battery Management
  • Load Switch
  • Battery Protection

WEBENCH® NexFET Designer

Design your power supply using FETs from TI

Vin
Min
V
  Max
V
 
Output Vout
V
  Iout
A
Ambient Temp °C  
Multiple Loads
Single Output
FPGA Power Processor Power
All
Actel
Altera
Lattice
Xilinx
TI
All
Multiple Loads
Multiple Loads
 

Vin (V)
Min
Max
Op. Temperature °C
Optional Light Output (Lumens)