CSD13303W1015 N-Channel NexFET™ Power MOSFET | TI.com

CSD13303W1015 (ACTIVE)

N-Channel NexFET™ Power MOSFET

 

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

Features

  • Ultra Low on Resistance
  • Ultra Low Qg and Qgd
  • Small Footprint
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • CSP 1 × 1.5 mm Wafer Level Package

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Parametrics Compare all products in N-channel MOSFET transistors

 
VDS (V)
Configuration
Rds(on) max at VGS=4.5 V (mOhms)
IDM, max pulsed drain current (Max) (A)
QG typ (nC)
QGD typ (nC)
Package (mm)
RDS(on) typ at VGS=2.5 V (Typ) (mOhm)
VGS (V)
VGSTH typ (V)
Logic level
Rating
CSD13303W1015
12    
Single    
20    
31    
3.9    
0.4    
WLP 1.0x1.5    
18    
8    
0.85    
Yes    
Catalog    

Design tool