N-Channel NexFET™ Power MOSFET  - CSD13303W1015

CSD13303W1015 (ACTIVE)

N-Channel NexFET™ Power MOSFET

 

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

Features

  • Ultra Low on Resistance
  • Ultra Low Qg and Qgd
  • Small Footprint
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • CSP 1 × 1.5 mm Wafer Level Package

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
RDS(on) Typ at VGS=4.5V (mOhm)
VGS (V)
VGSTH Typ (V)
CSD13303W1015
12   
Single   
20   
31   
3.9   
0.4   
WLP 1.0x1.5   
18   
16   
8   
0.85   

MOSFET Power Loss Calculator

MOSTFET Power Loss Calculator
Vin  V
Vout  V
Iout  A
Ambient Temp  °C