N-Channel NexFET™ Power MOSFET  - CSD13303W1015

CSD13303W1015 (ACTIVE)

N-Channel NexFET™ Power MOSFET

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

Features

  • Ultra Low on Resistance
  • Ultra Low Qg and Qgd
  • Small Footprint
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • CSP 1 × 1.5 mm Wafer Level Package

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Logic Level
Rds(on) Max at VGS=4.5V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
Configuration
Package
Rating
Approx. Price (US$)
QGD Typ (nC)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
RDS(on) Typ at VGS=4.5V (mOhm)
VGS (V)
VGSTH Typ (V)
ID, Continuous Drain Current at Ta=25degC (A)
CSD13303W1015
12    
Yes    
20    
31    
3.9    
Single    
WLP 1.0x1.5    
Catalog    
0.25 | 1ku    
0.4    
18    
16    
8    
0.85    
3.5    

Related end equipment

  • Battery Management
  • Load Switch
  • Battery Protection

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