CSD16321Q5 N-Channel NexFET™ Power MOSFET | TI.com

CSD16321Q5 (ACTIVE)

N-Channel NexFET™ Power MOSFET

N-Channel NexFET™ Power MOSFET - CSD16321Q5
 

Description

This 25-V, 1.9-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.

Features

  • Optimized for 5-V Gate Drive
  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • SON 5-mm × 6-mm Plastic Package

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
VGS (V)
VGSTH Typ (V)
ID, Silicon limited at Tc=25degC (A)
ID, package limited (A)
Logic Level
Rating
CSD16321Q5 CSD16322Q5 CSD16325Q5
25     25     25    
Single     Single     Single    
2.6     5.8     2.2    
200     136     200    
14     6.8     18    
2.5     1.3     3.5    
SON5x6     SON5x6     SON5x6    
10     10     10    
1.1     1.1     1.1    
  97      
100     100     100    
Yes     Yes     Yes    
Catalog     Catalog     Catalog