N-Channel NexFET™ Power MOSFET - CSD16321Q5

CSD16321Q5 (ACTIVE)

N-Channel NexFET™ Power MOSFET

 

Description

This 25-V, 1.9-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.

Features

  • Optimized for 5-V Gate Drive
  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • SON 5-mm × 6-mm Plastic Package

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
RDS(on) Typ at VGS=4.5V (mOhm)
VGS (V)
VGSTH Typ (V)
ID, Silicon limited at Tc=25degC (A)
CSD16321Q5 CSD16322Q5 CSD16325Q5
25    25    25   
Single    Single    Single   
2.6    5.8    2.2   
200    136    200   
14    6.8    18   
2.5    1.3    3.5   
SON5x6    SON5x6    SON5x6   
2.1    4.6    1.7   
10    10    10   
1.1    1.1    1.1   
  97     

WEBENCH® NexFET Designer

Design your power supply using FETs from TI

Vin
Min
V
  Max
V
 
Output Vout
V
  Iout
A
Ambient Temp °C  
Multiple Loads
Single Output
FPGA Power Processor Power
All
Actel
Altera
Lattice
Xilinx
TI
All
Multiple Loads
Multiple Loads
 

Vin (V)
Min
Max
Op. Temperature °C
Optional Light Output (Lumens)