This 25-V, 1.9-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.
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|Rds(on) Max at VGS=4.5V (mOhms)|
|IDM, Max Pulsed Drain Current (Max) (A)|
|QG Typ (nC)|
|QGD Typ (nC)|
|RDS(on) Typ at VGS=4.5V (mOhm)|
|VGSTH Typ (V)|
|ID, Silicon limited at Tc=25degC (A)|