CSD16409Q3 N-Channel NexFET™ Power MOSFET | TI.com

CSD16409Q3 (ACTIVE)

N-Channel NexFET™ Power MOSFET

N-Channel NexFET™ Power MOSFET - CSD16409Q3
Datasheet
 

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Features

  • Ultra Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3mm x 3.3mm Plastic Package
  • APPLICATIONS
    • Point-of-Load Synchronous Buck Converter for Applications
      in Networking, Telecom and Computing Systems
    • Optimized for Control FET Applications

NexFET is a trademark of Texas Instruments.

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Parametrics Compare all products in N-channel MOSFET transistors

 
VDS (V)
Configuration
Rds(on) max at VGS=4.5 V (mOhms)
Rds(on) max at VGS=10 V (mOhms)
IDM, max pulsed drain current (Max) (A)
QG typ (nC)
QGD typ (nC)
Package (mm)
VGS (V)
VGSTH typ (V)
ID, package limited (A)
Logic level
Rating
CSD16409Q3
25    
Single    
12.4    
8.2    
90    
4    
1    
SON3x3    
16    
2    
60    
Yes    
Catalog    

Design tool