N-Channel NexFET™ Power MOSFET - CSD16409Q3

CSD16409Q3 (ACTIVE)

N-Channel NexFET™ Power MOSFET

 

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Features

  • Ultra Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3mm x 3.3mm Plastic Package
  • APPLICATIONS
    • Point-of-Load Synchronous Buck Converter for Applications
      in Networking, Telecom and Computing Systems
    • Optimized for Control FET Applications

NexFET is a trademark of Texas Instruments.

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
RDS(on) Typ at VGS=4.5V (mOhm)
VGS (V)
VGSTH Typ (V)
CSD16409Q3
25   
Single   
12.4   
8.2   
90   
4   
1   
SON3x3   
9.5   
16   
2   

WEBENCH® NexFET Designer

Design your power supply using FETs from TI

Vin
Min
V
  Max
V
 
Output Vout
V
  Iout
A
Ambient Temp °C  
Multiple Loads
Single Output
FPGA Power Processor Power
All
Actel
Altera
Lattice
Xilinx
TI
All
Multiple Loads
Multiple Loads
 

Vin (V)
Min
Max
Op. Temperature °C
Optional Light Output (Lumens)