30-V N-Channel NexFET™ Power MOSFET - CSD17318Q2

CSD17318Q2 (ACTIVE)

30-V N-Channel NexFET™ Power MOSFET

 

Description

This 30-V, 12.6-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.

Features

  • Optimized for 5-V Gate Drive
  • Low Capacitance and Charge
  • Low RDS(ON)
  • Low-Thermal Resistance
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • SON 2-mm × 2-mm Plastic Package

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
RDS(on) Typ at VGS=4.5V (mOhm)
VGS (V)
VGSTH Typ (V)
ID, Silicon limited at Tc=25degC (A)
CSD17318Q2 CSD13202Q2 CSD17313Q2 CSD17571Q2
30    12    30    30   
Single    Single    Single    Single   
16.9    9.3    32    29   
      24   
68    76    20    39   
6.0    5.1    2.1    2.4   
1.3    0.76    0.4    0.6   
SON2x2    SON2x2    SON2x2    SON2x2   
20    9.1       
13.9    7.5    26    24   
10    8    10    20   
0.9    0.8    1.3    1.6   
25         

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