30V, N-Channel FemtoFET™MOSFET - CSD17381F4

CSD17381F4 (ACTIVE)

30V, N-Channel FemtoFET™MOSFET

Applications

  • Laptop
  • Tablet
  • Cell phone
  • Battery charger

Description

The FemtoFET MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Features

  • Ultra-Low On Resistance
  • Ultra-Low Qg and Qgd
  • Low Threshold Voltage
  • Ultra-Small Footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Ultra-Low Profile
    • 0.35 mm Height
  • Integrated ESD Protection Diode
    • Rated > 4 kV HBM
    • Rated > 2 kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

View more

Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Logic Level
Rds(on) Max @ VGS=4.5V (mOhms)
Rds(on) Max @ VGS=10V (mOhms)
ID / IPEAK (Max) (A)
Id Max@TC=25°C (A)
QG Typ (nC)
Configuration
Package
Rating
Approx. Price (US$)
QGD Typ (nC)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
RDS(on) Typ at VGS=4.5V (mOhm)
VGS (V)
VGSTH Typ (V)
CSD17381F4
30    
Yes    
117    
109    
10    
10    
1.04    
Single    
LGA 1.0 x 0.6mm    
Catalog    
0.10 | 1ku    
0.133    
110    
90    
12    
0.85    

Related end equipment

  • Optimized for Load Switch Applications
  • Optimized for General Purpose Switching
    Applications
  • Single-Cell Battery Applications
  • Handheld and Mobile Applications

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