(ACTIVE) 30V, N-Channel FemtoFET™MOSFET


Functional diagram


This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.


  • Low On Resistance
  • Low Qg and Qgd
  • Low-Threshold Voltage
  • Ultra-Small Footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Ultra-Low Profile
    • 0.35-mm Height
  • Integrated ESD Protection Diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and Halogen Free
  • RoHS Compliant


VDS (V) 30   
Configuration Single   
Rds(on) Max at VGS=4.5V (mOhms) 260   
Rds(on) Max at VGS=10V (mOhms) 230   
IDM, Max Pulsed Drain Current (Max) (A) 5   
QG Typ (nC) 1.01   
QGD Typ (nC) 0.13   
Package (mm) LGA 1.0 x 0.6mm   
RDS(on) Typ at VGS=2.5V (Typ) (mOhm) 240   
RDS(on) Typ at VGS=4.5V (mOhm) 200   
VGS (V) 12   
VGSTH Typ (V) 0.85   

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