30V, N-Channel FemtoFET™MOSFET - CSD17483F4

CSD17483F4 (ACTIVE)

30V, N-Channel FemtoFET™MOSFET

 

Applications

  • Laptop
  • Tablet
  • Cell phone
  • Battery charger

Description

This 200 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Features

  • Low On-Resistance
  • Low Qg and Qgd
  • Low Threshold Voltage
  • Ultra-Small Footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Ultra-Low Profile
    • 0.35 mm Height
  • Integrated ESD Protection
    Diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

View more

Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
ID, Continuous Drain Current at Ta=25degC (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
Approx. Price (US$)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
RDS(on) Typ at VGS=4.5V (mOhm)
VGS (V)
VGSTH Typ (V)
CSD17483F4
30   
Single   
260   
230   
5   
1.5   
1.01   
0.13   
LGA 1.0 x 0.6mm   
0.04 | 1ku   
240   
200   
12   
0.85   

WEBENCH® NexFET Designer

Design your power supply using FETs from TI

Vin
Min
V
  Max
V
 
Output Vout
V
  Iout
A
Ambient Temp °C  
Multiple Loads
Single Output
FPGA Power Processor Power
All
Actel
Altera
Lattice
Xilinx
TI
All
Multiple Loads
Multiple Loads
 

Vin (V)
Min
Max
Op. Temperature °C
Optional Light Output (Lumens)