CSD17483F4 30V, N-Channel FemtoFET™MOSFET | TI.com

CSD17483F4 (ACTIVE)

30V, N-Channel FemtoFET™MOSFET

 

Applications

  • Laptop
  • Tablet
  • Cell phone
  • Battery charger

Description

This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.








Features

  • Low On-Resistance
  • Low Qg and Qgd
  • Low-Threshold Voltage
  • Ultra-Small Footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Ultra-Low Profile
    • 0.35-mm Height
  • Integrated ESD Protection Diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

All trademarks are the property of their respective owners.

View more

Parametrics Compare all products in N-channel MOSFET transistors

 
VDS (V)
Configuration
Rds(on) max at VGS=4.5 V (mOhms)
Rds(on) max at VGS=10 V (mOhms)
IDM, max pulsed drain current (Max) (A)
QG typ (nC)
QGD typ (nC)
Package (mm)
RDS(on) typ at VGS=2.5 V (Typ) (mOhm)
VGS (V)
VGSTH typ (V)
Logic level
Rating
CSD17483F4
30    
Single    
260    
230    
5    
1.01    
0.13    
LGA 1.0 x 0.6mm    
240    
12    
0.85    
Yes    
Catalog    

Design tool