CSD18512Q5B 40V N-Channel NexFET™ Power MOSFET | TI.com

CSD18512Q5B (ACTIVE)

40V N-Channel NexFET™ Power MOSFET

40V N-Channel NexFET™ Power MOSFET - CSD18512Q5B
 

Description

This 40 V, 1.3 mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Features

  • Low RDS(ON)
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen-Free
  • SON 5 mm × 6 mm Plastic Package

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
VGS (V)
VGSTH Typ (V)
ID, Silicon limited at Tc=25degC (A)
ID, package limited (A)
Logic Level
CSD18512Q5B CSD18510KCS CSD18510KTT CSD18510Q5B CSD18511Q5A CSD18513Q5A CSD18514Q5A
40     40     40     40     40     40     40    
Single     Single     Single     Single     Single     Single     Single    
2.3     2.6     2.6     1.6     3.5     5.3     7.9    
1.6     1.7     1.7     0.96     2.3     3.4     4.9    
400     400     400     400     400     400     237    
75     119     119     118     63     45     29    
13.3     21     21     21     11.2     8.8     5    
SON5x6     TO-220     D2PAK     SON5x6     SON5x6     SON5x6     SON5x6    
20     20     20     20     20     20     20    
1.6     1.7     1.7     1.7     1.8     1.8     1.8    
211     274     274     300     159     124     89    
100     200     200     100     100     100     50    
Yes     Yes     Yes     Yes     Yes     Yes     Yes