CSD19506KCS 80V, N-Channel NexFET™ Power MOSFET | TI.com

CSD19506KCS (ACTIVE)

80V, N-Channel NexFET™ Power MOSFET

 

Description

This 80 V, 2.0 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • TO-220 Plastic Package

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Parametrics Compare all products in N-channel MOSFET transistors

 
VDS (V)
Configuration
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
VGS (V)
VGSTH Typ (V)
ID, Silicon limited at Tc=25degC (A)
ID, package limited (A)
Logic Level
Rating
CSD19506KCS CSD19501KCS CSD19502Q5B CSD19503KCS CSD19505KCS
80     80     80     80     80    
Single     Single     Single     Single     Single    
2.3     6.6     4.1     9.2     3.1    
400     305     400     247     400    
120     38     48     28     76    
20     5.8     8.6     5.4     11    
TO-220     TO-220     SON5x6     TO-220     TO-220    
20     20     20     20     20    
2.5     2.6     2.7     2.8     2.6    
273     129     157     94     208    
150     100     100     100     150    
No     No     No     No     No    
Catalog     Catalog     Catalog     Catalog     Catalog    

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