12V , P-Channel FemtoFET™MOSFET - CSD23381F4

CSD23381F4 (ACTIVE)

12V , P-Channel FemtoFET™MOSFET

 

Description

This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Features

  • Ultra-Low On-Resistance
  • Ultra-Low Qg and Qgd
  • High Operating Drain Current
  • Ultra-Small Footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Ultra-Low Profile
    • 0.35 mm Max Height
  • Integrated ESD Protection Diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

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Parametrics Compare all products in P-Channel MOSFET Transistor

 
VDS (V)
VGS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=2.5V (mOhms)
Rds(on) Max at VGS=1.8V (mOhms)
Id Peak (Max) (A)
QG Typ (nC)
QGD Typ (nC)
QGS Typ (nC)
VGSTH Typ (V)
Package (mm)
Approx. Price (US$)
CSD23381F4 CSD23280F3 CSD23382F4 CSD25480F3
-12    -12    -12    -20   
-8    -6    -8    -12   
Single    Single    Single    Single   
175    116    76    159   
300    165    105    260   
970    250    199    840   
-9    -11.4    -22    -10.4   
1.14    0.95    1.04    0.7   
0.19    0.068    0.15    0.1   
0.3    0.30    0.5    0.26   
-0.95    -0.65    -0.8    -0.95   
LGA0.6x1.0    LGA0.6x0.7    LGA0.6x1.0    LGA0.6x0.7   
0.05 | 1ku    0.05 | 1ku    0.07 | 1ku    0.05 | 1ku   

WEBENCH® NexFET Designer

Design your power supply using FETs from TI

Vin
Min
V
  Max
V
 
Output Vout
V
  Iout
A
Ambient Temp °C  
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Vin (V)
Min
Max
Op. Temperature °C
Optional Light Output (Lumens)