CSD25213W10 (ACTIVE)

P-Channel NexFET™ Power MOSFET

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

Features

  • Ultra Low Qg and Qgd
  • Small Footprint 1mm × 1mm
  • Low Profile 0.62mm Height
  • Pb Free
  • Gate-Source Voltage Clamp
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free

View more

Parametrics Compare all products in P-Channel MOSFET Transistor

 
VDS (V)
Logic Level
VGS (V)
Rds(on) Max @ VGS=2.5V (mOhms)
Rds(on) Max @ VGS=4.5V (mOhms)
Id peak (Max) (A)
Id Max@TC=25°C (A)
QG Typ (nC)
QGD Typ (nC)
QGS Typ (nC)
VGSTH Typ (V)
Configuration
Package
High-Side PMOS
Approx. Price (US$)
CSD25213W10
-20    
Yes    
-6    
67    
47    
-16    
-1.6    
2.2    
0.14    
0.74    
-0.85    
Single    
WLP1.0x1.0    
 
0.22 | 1ku    

Related end equipment

  • Battery Management
  • Load Switch
  • Battery Protection

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