CSD25213W10 P-Channel NexFET™ Power MOSFET | TI.com

CSD25213W10 (ACTIVE)

P-Channel NexFET™ Power MOSFET

P-Channel NexFET™ Power MOSFET - CSD25213W10
Datasheet
 

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

Features

  • Ultra Low Qg and Qgd
  • Small Footprint 1mm × 1mm
  • Low Profile 0.62mm Height
  • Pb Free
  • Gate-Source Voltage Clamp
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free

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Parametrics Compare all products in P-channel MOSFET transistors

 
VDS (V)
VGS (V)
Configuration
Rds(on) max at VGS=4.5 V (mOhms)
Rds(on) max at VGS=2.5 V (mOhms)
Rds(on) max at VGS=1.8 V (mOhms)
Id peak (Max) (A)
Id max cont (A)
QG typ (nC)
QGD typ (nC)
QGS typ (nC)
VGSTH typ (V)
Package (mm)
Rating
CSD25213W10 CSD25480F3 CSD25501F3
-20     -20     -20    
-6     -12     -20    
Single     Single     Single    
47     159     76    
67     260     125    
  840     260    
-16     -10.4     -13.6    
-1.6     -1.7     -3.6    
2.2     0.7     1.02    
0.14     0.1     0.09    
0.74     0.26     0.45    
-0.85     -0.95     -0.75    
WLP 1.0x1.0     LGA 0.6x0.7     LGA 0.6x0.7    
Catalog     Catalog     Catalog    

Design tool