P-Channel NexFET™ Power MOSFET - CSD25213W10

CSD25213W10 (ACTIVE)

P-Channel NexFET™ Power MOSFET

 

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

Features

  • Ultra Low Qg and Qgd
  • Small Footprint 1mm × 1mm
  • Low Profile 0.62mm Height
  • Pb Free
  • Gate-Source Voltage Clamp
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free

View more

Parametrics Compare all products in P-Channel MOSFET Transistor

 
VDS (V)
Logic Level
VGS (V)
Rds(on) Max at VGS=2.5V (mOhms)
Rds(on) Max at VGS=4.5V (mOhms)
Id peak (Max) (A)
QG Typ (nC)
QGD Typ (nC)
QGS Typ (nC)
VGSTH Typ (V)
Configuration
Package (mm)
High-Side PMOS
Approx. Price (US$)
CSD25213W10
-20   
Yes   
-6   
67   
47   
-16   
2.2   
0.14   
0.74   
-0.85   
Single   
WLP1.0x1.0   
YES  
0.09 | 1ku   

Related end equipment

  • Battery Management
  • Load Switch
  • Battery Protection

Featured tools and software

WEBENCH® NexFET Designer

Design your power supply using FETs from TI

Vin
Min
V
  Max
V
 
Output Vout
V
  Iout
A
Ambient Temp °C  
Multiple Loads
Single Output
FPGA Power Processor Power
All
Actel
Altera
Lattice
Xilinx
TI
All
Multiple Loads
Multiple Loads
 

Vin (V)
Min
Max
Op. Temperature °C
Optional Light Output (Lumens)