CSD25310Q2 (ACTIVE)

20-V P-Channel NexFET Power MOSFET, CSD25310Q2

 

Description

This 19.9 mΩ, –20 V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2 mm × 2 mm plastic package make the device ideal for battery operated space constrained operations.

For all available packages, see the orderable addendum at the end of the data sheet.

Features

  • Ultra-Low Qg and Qgd
  • Low On Resistance
  • Low Thermal Resistance
  • Pb-Free
  • RoHS Compliant
  • Halogen Free
  • SON 2-mm × 2-mm Plastic Package

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Parametrics Compare all products in P-Channel MOSFET Transistor

 
VDS (V)
VGS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=2.5V (mOhms)
Rds(on) Max at VGS=1.8V (mOhms)
Id Peak (Max) (A)
Id Max Cont (A)
QG Typ (nC)
QGD Typ (nC)
QGS Typ (nC)
VGSTH Typ (V)
Package (mm)
CSD25310Q2 CSD25402Q3A CSD25404Q3
-20    -20    -20   
-8    -12    -12   
Single    Single    Single   
23.9    8.9    6.5   
32.5    15.9    12.1   
89    300    150   
-48    -82    -240   
-9.6    -15    -18   
3.6    7.5    10.8   
0.5    1.1    2.2   
1.1    2.4    2.8   
-0.85    -0.9    -0.9   
SON 2x2    SON 3x3    SON 3x3   

MOSFET Power Loss Calculator

MOSTFET Power Loss Calculator
Vin  V
Vout  V
Iout  A
Ambient Temp  °C