CSD25310Q2 20-V P-Channel NexFET Power MOSFET, CSD25310Q2 | TI.com

CSD25310Q2 (ACTIVE)

20-V P-Channel NexFET Power MOSFET, CSD25310Q2

20-V P-Channel NexFET Power MOSFET, CSD25310Q2 - CSD25310Q2
 

Description

This 19.9 mΩ, –20 V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2 mm × 2 mm plastic package make the device ideal for battery operated space constrained operations.

For all available packages, see the orderable addendum at the end of the data sheet.

Features

  • Ultra-Low Qg and Qgd
  • Low On Resistance
  • Low Thermal Resistance
  • Pb-Free
  • RoHS Compliant
  • Halogen Free
  • SON 2-mm × 2-mm Plastic Package

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Parametrics Compare all products in P-channel MOSFET transistors

 
VDS (V)
VGS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=2.5V (mOhms)
Rds(on) Max at VGS=1.8V (mOhms)
Id Peak (Max) (A)
Id Max Cont (A)
QG Typ (nC)
QGD Typ (nC)
QGS Typ (nC)
VGSTH Typ (V)
Package (mm)
Rating
CSD25310Q2 CSD25402Q3A CSD25404Q3
-20     -20     -20    
-8     -12     -12    
Single     Single     Single    
23.9     8.9     6.5    
32.5     15.9     12.1    
89     300     150    
-48     -82     -240    
-9.6     -15     -18    
3.6     7.5     10.8    
0.5     1.1     2.2    
1.1     2.4     2.8    
-0.85     -0.9     -0.9    
SON 2x2     SON 3x3     SON 3x3    
Catalog     Catalog     Catalog