20V , P-Channel FemtoFET™MOSFET - CSD25483F4

CSD25483F4 (ACTIVE)

20V , P-Channel FemtoFET™MOSFET

Description

This 210 mΩ, 20 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Features

  • Ultra-Low On-Resistance
  • Ultra-Low Qg and Qgd
  • High Operating Drain Current
  • Ultra-Small Footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Ultra-Low Profile
    • 0.35 mm Max Height
  • Integrated ESD Protection Diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

View more

Parametrics Compare all products in P-Channel MOSFET Transistor

 
VDS (V)
Logic Level
VGS (V)
Rds(on) Max @ VGS=1.8V (mOhms)
Rds(on) Max @ VGS=2.5V (mOhms)
Rds(on) Max @ VGS=4.5V (mOhms)
Id peak (Max) (A)
Id Max@TC=25°C (A)
QG Typ (nC)
QGD Typ (nC)
QGS Typ (nC)
VGSTH Typ (V)
Configuration
Package
Approx. Price (US$)
CSD25483F4
-20    
Yes    
-12    
1070    
390    
245    
-6.5    
-1.6    
0.96    
0.16    
0.25    
-0.95    
Single    
LGA0.6x1.0    
0.07 | 1ku    

Related end equipment

  • Optimized for load Switch Applications
  • Optimized for General Purpose Switching Applications
  • Battery Applications
  • Handheld and Mobile Applications

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