CSD87501L CSD87501L 30-V Dual N-Channel Common Drain NexFET™ Power MOSFET | TI.com

CSD87501L (ACTIVE)

CSD87501L 30-V Dual N-Channel Common Drain NexFET™ Power MOSFET

CSD87501L 30-V Dual N-Channel Common Drain NexFET™ Power MOSFET - CSD87501L
 

Description

This 30 V, 6.6 mΩ, 3.37 mm × 1.47 mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small size and common drain configuration make the device ideal for multi-cell battery pack applications and small handheld devices.

Features

  • Low On-Resistance
  • Small Footprint of 3.37 × 1.47 mm
  • Ultra-Low Profile – 0.2 mm High
  • Pb-Free
  • RoHS Compliant
  • Halogen Free
  • Gate ESD Protection

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Parametrics Compare all products in N-channel MOSFET transistors

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
VGS (V)
VGSTH Typ (V)
Logic Level
Rating
CSD87501L CSD83325L CSD85302L CSD87313DMS
30     12     20     30    
Dual Common Drain     Dual     Dual Common Drain     Dual Common Drain    
5.5     5.9     24     5.5    
3.9          
72     52     37      
15     8.4     6     28    
6     1.9     1.4     6    
LGA     LGA     LGA 1.35x1.35     SON3x3    
  8.4     29     6.6    
20     10     10     10    
1.8     0.95     0.9     0.9    
Yes     Yes     Yes     Yes    
Catalog     Catalog     Catalog     Catalog