This 30 V, 6.6 mΩ, 3.37 mm × 1.47 mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small size and common drain configuration make the device ideal for multi-cell battery pack applications and small handheld devices.
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|Rds(on) Max at VGS=4.5V (mOhms)|
|Rds(on) Max at VGS=10V (mOhms)|
|IDM, Max Pulsed Drain Current (Max) (A)|
|QG Typ (nC)|
|QGD Typ (nC)|
|RDS(on) Typ at VGS=2.5V (Typ) (mOhm)|
|RDS(on) Typ at VGS=4.5V (mOhm)|
|VGSTH Typ (V)|
|WEBENCH® NexFET Designer|
|What are WEBENCH® tools?|