CSD87501L 30-V Dual N-Channel Common Drain NexFET™ Power MOSFET - CSD87501L

CSD87501L (ACTIVE)

CSD87501L 30-V Dual N-Channel Common Drain NexFET™ Power MOSFET

 

Description

This 30 V, 6.6 mΩ, 3.37 mm × 1.47 mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small size and common drain configuration make the device ideal for multi-cell battery pack applications and small handheld devices.

Features

  • Low On-Resistance
  • Small Footprint of 3.37 × 1.47 mm
  • Ultra-Low Profile – 0.2 mm High
  • Pb-Free
  • RoHS Compliant
  • Halogen Free
  • Gate ESD Protection

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Parametrics Compare all products in N-Channel MOSFET Transistor

 
VDS (V)
Configuration
Rds(on) Max at VGS=4.5V (mOhms)
Rds(on) Max at VGS=10V (mOhms)
IDM, Max Pulsed Drain Current (Max) (A)
QG Typ (nC)
QGD Typ (nC)
Package (mm)
RDS(on) Typ at VGS=2.5V (Typ) (mOhm)
RDS(on) Typ at VGS=4.5V (mOhm)
VGS (V)
VGSTH Typ (V)
CSD87501L CSD83325L CSD85302L CSD87313DMS
30    12    20    30   
Dual Common Drain    Dual    Dual Common Drain    Dual Common Drain   
5.5    5.9    24    5.5   
3.9         
72    52    37     
15    8.4    6    28   
6    1.9    1.4    6   
LGA    LGA    LGA 1.35x1.35    SON3x3   
  8.4    29    6.6   
4.6    4.9    20    4.6   
20    10    10    10   
1.8    0.95    0.9    0.9   
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