The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.
In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.
All trademarks are the property of their respective owners.
|Number of Channels (#)|
|Bus Voltage (V)|
|Peak Output Current (A)|
|Input VCC (Min) (V)|
|Input VCC (Max) (V)|
|Rise Time (ns)|
|Fall Time (ns)|
|Prop Delay (ns)|
|Operating Temperature Range (C)|
|Package Size: mm2:W x L (PKG)|
|Catalog||LM5113||TI's standard catalog product|