Automotive, 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs - LM5113-Q1

LM5113-Q1 (ACTIVE)

Automotive, 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs

 

Description

The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.

Features

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: -40°C to 125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C6
  • Independent High-Side and Low-Side
    TTL Logic Inputs
  • 1.2-A Peak Source, 5-A Peak Sink Output Current
  • High-Side Floating Bias Voltage Rail
    Operates up to 100-VDC
  • Internal Bootstrap Supply Voltage Clamping
  • Split Outputs for Adjustable
    Turnon and Turnoff Strength
  • 0.6-Ω Pulldown, 2.1-Ω Pullup Resistance
  • Fast Propagation Times (28 ns Typical)
  • Excellent Propagation Delay Matching
    (1.5 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption

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Parametrics Compare all products in GaN FET Drivers

 
Driver Configuration
Number of Channels (#)
Power Switch
Bus Voltage (V)
Peak Output Current (A)
Input VCC (Min) (V)
Input VCC (Max) (V)
Rise Time (ns)
Fall Time (ns)
Prop Delay (ns)
Input Threshold
Rating
Operating Temperature Range (C)
Package Group
Package Size: mm2:W x L (PKG)
LM5113-Q1 LM5113 LMG1205
Dual Independent    Dual
Independent   
Dual, Independent   
2    2    2   
MOSFET
GaNFET   
MOSFET
GaNFET   
MOSFET
GaNFET   
90    90    90   
5    5    5   
4.5    4.5    4.5   
5.5    5.5    5.5   
7    7    7   
3.5    3.5    3.5   
30    30    35   
TTL    TTL    TTL   
Automotive    Catalog    Catalog   
-40 to 125    -40 to 125    -40 to 125   
WSON    DSBGA
WSON   
DSBGA   
See datasheet (WSON)    See datasheet (DSBGA)
See datasheet (WSON)   
See datasheet (DSBGA)   

Other qualified versions of LM5113-Q1

Version Part Number Definition
Catalog LM5113 TI's standard catalog product