LM5113 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs | TI.com

LM5113 (NRND)

100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs

100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs - LM5113
 

Not Recommended for New Designs (NRND)

Replaced By LMG1205 – The device has the SAME FUNCTIONALITY and PINOUT as the compared device but is NOT an exact equivalent.

TI does not recommend using this part in a new design. This product continues to be in production to support existing customers.

Description

The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

The LMG1205 is an enhancement over the LM5113. The LMG1205 takes the design of the LM5113 and includes start-up logic, level shifter, and power-off Vgs clamp enhancements to provide a more robust solution.

In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.

Features

  • Independent High-Side and Low-Side
    TTL Logic Inputs
  • 1.2 A / 5 A Peak Source / Sink Current
  • High-Side Floating Bias Voltage Rail
    Operates up to 100 VDC
  • Internal Bootstrap Supply Voltage Clamping
  • Split Outputs for Adjustable
    Turnon/Turnoff Strength
  • 0.6-Ω / 2.1-Ω Pulldown / Pullup Resistance
  • Fast Propagation Times (28 ns Typical)
  • Excellent Propagation Delay Matching
    (1.5 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption

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Other qualified versions of LM5113

Version Part Number Definition
Automotive LM5113-Q1 Q100 devices qualified for high-reliability automotive applications targeting zero defects