100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs - LM5113

LM5113 (ACTIVE)

100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs

 

Recommended alternative parts

  • LMG1205  -  LMG1205 100-V, 1.2-A, 5-A is TI's latest generation of half-brige GaN gate drivers. This device is suggested for use in new designs.

Description

The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turn-on and turn-off strength independently.

In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turn-on during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.

Features

  • Independent High-Side and Low-Side
    TTL Logic Inputs
  • 1.2 A / 5 A Peak Source / Sink Current
  • High-Side Floating Bias Voltage Rail
    Operates up to 100 VDC
  • Internal Bootstrap Supply Voltage Clamping
  • Split Outputs for Adjustable
    Turn-on/Turn-off Strength
  • 0.6 Ω / 2.1 Ω Pull-down/Pull-up Resistance
  • Fast Propagation Times (28 ns Typical)
  • Excellent Propagation Delay Matching
    (1.5 ns Typical)
  • Supply Rail Under-Voltage Lockout
  • Low Power Consumption

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Parametrics Compare all products in GaN FET Drivers

 
Driver Configuration
Number of Channels (#)
Power Switch
Bus Voltage (V)
Peak Output Current (A)
Input VCC (Min) (V)
Input VCC (Max) (V)
Rise Time (ns)
Fall Time (ns)
Prop Delay (ns)
Input Threshold
Rating
Operating Temperature Range (C)
Package Group
Package Size: mm2:W x L (PKG)
LM5113 LM5113-Q1 LM5114 LMG1205 UCC27511 UCC27611
Dual
Independent   
Dual Independent    Single    Dual, Independent    Inverting
Non-Inverting   
Inverting
Non-Inverting   
2    2    1    2    1    1   
MOSFET
GaNFET   
MOSFET
GaNFET   
MOSFET
IGBT
GaNFET   
MOSFET
GaNFET   
MOSFET
IGBT
GaNFET   
MOSFET
IGBT
GaNFET   
90    90      90       
5    5    7.6    5    8    6   
4.5    4.5    4    4.5    4.5    4   
5.5    5.5    12.6    5.5    18    18   
7    7    12    7    9    9   
3.5    3.5    3    3.5    7    4   
30    30    12    35    13    14   
TTL    TTL    CMOS
TTL   
TTL    CMOS
TTL   
CMOS
TTL   
Catalog    Automotive    Catalog    Catalog    Catalog    Catalog   
-40 to 125    -40 to 125    -40 to 125    -40 to 125    -40 to 140    -40 to 140   
DSBGA
WSON   
WSON    SOT-23
WSON   
DSBGA    SOT-23    WSON   
See datasheet (DSBGA)
See datasheet (WSON)   
See datasheet (WSON)    6SOT-23: 8 mm2: 2.8 x 2.9(SOT-23)
See datasheet (WSON)   
See datasheet (DSBGA)    6SOT-23: 8 mm2: 2.8 x 2.9(SOT-23)    See datasheet (WSON)   

Other qualified versions of LM5113

Version Part Number Definition
Automotive LM5113-Q1 Q100 devices qualified for high-reliability automotive applications targeting zero defects