LMG5200

ACTIVE

80V GaN Half Bridge Power Stage

Product details

VDS (max) (V) 80 RDS(on) (mΩ) 15 ID (max) (A) 10 Features Half-bridge Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 80 RDS(on) (mΩ) 15 ID (max) (A) 10 Features Half-bridge Rating Catalog Operating temperature range (°C) -40 to 125
QFM (MOF) 9 48 mm² 8 x 6
  • Integrated 15-mΩ GaN FETs and Driver
  • 80-V Continuous, 100-V Pulsed Voltage Rating
  • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements
  • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Topologies
  • Ideal for Isolated and Non-Isolated Applications
  • Gate Driver Capable of Up to 10 MHz Switching
  • Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
  • Supply Rail Undervoltage Lockout Protection
  • Excellent Propagation Delay (29.5 ns Typical) and Matching (2 ns Typical)
  • Low Power Consumption
  • Integrated 15-mΩ GaN FETs and Driver
  • 80-V Continuous, 100-V Pulsed Voltage Rating
  • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements
  • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Causing Excessive Ringing in Hard-Switched Topologies
  • Ideal for Isolated and Non-Isolated Applications
  • Gate Driver Capable of Up to 10 MHz Switching
  • Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
  • Supply Rail Undervoltage Lockout Protection
  • Excellent Propagation Delay (29.5 ns Typical) and Matching (2 ns Typical)
  • Low Power Consumption

The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm × 8 mm × 2 mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48-V to point-of-load voltages (0.5-1.5 V).

The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm × 8 mm × 2 mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48-V to point-of-load voltages (0.5-1.5 V).

Download View video with transcript Video

Technical documentation

star =Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 36
Type Title Date
* Data sheet LMG5200 80-V, 10-A GaN Half-Bridge Power Stage datasheet (Rev. E) PDF | HTML 29 Oct 2018
Selection guide Current Sense Amplifiers (Rev. E) 20 Sep 2021
E-book Ein Techniker-Leitfaden für Industrieroboter-Designs 25 Mar 2020
E-book E-book: An engineer’s guide to industrial robot designs 12 Feb 2020
Application note Dual-Axis Motor Control Using FCL and SFRA On a Single C2000™ MCU PDF | HTML 07 Aug 2019
Technical article Gallium nitride: supporting applications from watts to kilowatts PDF | HTML 19 Dec 2018
Technical article The sound of GaN PDF | HTML 26 Jun 2018
EVM User's guide BOOSTXL-3PhGaNInv Evaluation Module User Guide (Rev. A) 18 Apr 2018
Application note Dual Motor Ctl Using FCL and Perf Analysis Using SFRA on TMS320F28379D LaunchPad (Rev. A) 20 Mar 2018
Application note Performance Analysis of Fast Current Loop (FCL) in Servo 06 Mar 2018
Technical article GaN reliability standards reach milestone PDF | HTML 18 Sep 2017
EVM User's guide Using the LMG5200POLEVM-10A GaN 48V-1V Point-of-Load EVM (Rev. B) 02 Aug 2017
Technical article The power to innovate industrial design PDF | HTML 27 Mar 2017
Technical article The power to do even more with GaN PDF | HTML 25 Mar 2017
White paper Enabling high-voltage power delivery through the power process chain 23 Mar 2017
EVM User's guide Using the LMG5200EVM-02 GaN Half-Bridge Power Stage EVM 28 Feb 2017
Technical article Gallium nitride transistors open up new frontiers in high-speed motor drives PDF | HTML 12 Dec 2016
Technical article Five benefits of enhanced PWM rejection for in-line motor control PDF | HTML 08 Nov 2016
Technical article What’s next for Industry 4.0? The best new technologies shaping the future of smar PDF | HTML 07 Nov 2016
Technical article Rethinking server power architecture in a post-silicon world: Getting from 48 Vin PDF | HTML 01 Aug 2016
Technical article Enabling 48V-to-POL single-stage conversion with GaN PDF | HTML 05 Jul 2016
Technical article Highlights from APEC 2016 – GaN, 48V POL, wireless charging and more! PDF | HTML 28 Mar 2016
Technical article Let’s GaN together, reliably PDF | HTML 22 Mar 2016
Technical article Control a GaN power stage with a Hercules™ LaunchPad™ development kit – part 2 PDF | HTML 17 Mar 2016
Technical article Control a GaN power stage with a Hercules™ LaunchPad™ development kit – part 1 PDF | HTML 23 Feb 2016
Technical article GaN to the rescue! Part 2: Measurements PDF | HTML 07 Jan 2016
Technical article Simulating electromagnetic interference – is it possible? PDF | HTML 01 Dec 2015
White paper Redefining power management through high-voltage innovation 12 Nov 2015
Technical article GaN to the rescue! Part 1: Body-diode reverse recovery PDF | HTML 28 Oct 2015
Application note Layout Guidelines for LMG5200 ~ 80-V, 10-A, GaN Power Stage Module (Rev. A) 23 Sep 2015
Technical article Control a GaN half-bridge power stage with a single PWM signal PDF | HTML 10 Sep 2015
Technical article Get into electromagnetic compliance with GaN PDF | HTML 26 Aug 2015
Technical article Are you accurately measuring the picosecond rise time of your GaN device? PDF | HTML 01 Jul 2015
White paper A comprehensive methodology to qualify the reliability of GaN products 02 Mar 2015
White paper GaN power module performance advantage in DC/DC converters 02 Mar 2015
White paper Advancing Power Supply Solutions Through the Promise of GaN 24 Feb 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG5200EVM-02 — LMG5200 GaN power stage evaluation module

80-V 10A Power Stage EVM - The LMG5200 EVM board is a small easy to use power stage with an external PWM signal. The EVM is suitable for evaluating the performance of LMG5200 power stage in many different DC-DC converter topologies. It can be used to estimate the performance of LMG5200 to measure (...)
User guide: PDF
Not available on TI.com
Evaluation board

LMG5200POLEVM-10 — LMG5200 GaN 48V to 1V point of load evaluation module

The LMG5200POLEVM-10 EVM is designed to evaluate the LMG5200 GaN power stage and the TPS53632G half-bridge point-of-load controller in a 48V to 1V application.  This EVM implements the 48V-1V converter as a single-stage hard-switched half-bridge with current-doubler rectifier.  The EVM (...)

User guide: PDF
Not available on TI.com
Daughter card

BOOSTXL-3PHGANINV — 48-V Three-Phase Inverter With Shunt-Based In-Line Motor Phase Current Sensing Evaluation Module

The BOOSTXL-3PHGANINV evaluation module features a 48-V/10-A three-phase GaN inverter with precision in-line shunt-based phase current sensing for accurate control of precision drives such as servo drives.
 

MathWorks MATLAB & Simulink example models include the following:

User guide: PDF
Not available on TI.com
Simulation model

LMG5200 PSpice Transient Model (Rev. A)

SNVM711A.ZIP (52 KB) - PSpice Model
Simulation model

LMG5200 PSpice Transient Model (Rev. C)

SNVM711C.ZIP (54 KB) - PSpice Model
Simulation model

LMG5200 TINA-TI Transient Reference Design (Rev. C)

SNOM478C.TSC (58 KB) - TINA-TI Reference Design
Simulation model

LMG5200 TINA-TI Transient Spice Model

SNOM477.ZIP (23 KB) - TINA-TI Spice Model
Simulation model

LMG5200 Unencrypted Spice Transient Model

SNOJ012.ZIP (3 KB) - Spice Model
Calculation tool

LMGXX-GAN-LLC-CALC GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
lock = Requires export approval (1 minute)
Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) ICs
LMG2100R044 100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection LMG2610 650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense LMG3410R050 600-V 50-mΩ GaN with integrated driver and protection LMG3410R070 600-V 70mΩ GaN with integrated driver and protection LMG3410R150 600-V 150-mΩ GaN with integrated driver and overcurrent protection LMG3411R050 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R150 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3422R030 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3422R050 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3425R030 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3425R050 600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode LMG3522R030 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3522R030-Q1 Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting LMG3526R030 650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection LMG5200 80V GaN Half Bridge Power Stage
PCB layout

LMG5200POLEVM PCB Design File

SNOR024.ZIP (1553 KB)
Schematic

LMG5200 Power Stage Design Files

SNOR011.ZIP (4042 KB)
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

TIDA-00909 — 48V/10A High Frequency PWM 3-Phase GaN Inverter Reference Design for High-Speed Drives

Low voltage, high-speed drives and/or low inductance brushless motors require higher inverter switching frequencies in the range of 40 kHz to 100 kHz to minimize losses and torque ripple in the motor. The TIDA-00909 reference design achieves that by using a 3-phase inverter with three 80V/10A (...)
Design guide: PDF
Schematic: PDF
Reference designs

TIDA-00913 — 48V 3-Phase Inverter with Shunt-based In-line Motor Phase Current Sensing Reference Design

The TIDA-00913 reference design realizes a 48V/10A 3-phase GaN inverter with precision in-line shunt-based phase current sensing for accurate control of precision drives such as servo drives. One of the largest challenges with in-line shunt-based phase current sensing is the high common-mode (...)
Design guide: PDF
Schematic: PDF
Reference designs

TIDM-02006 — Distributed multi-axis servo drive over fast serial interface (FSI) reference design

This reference design presents an example distributed or decentralized multi-axis servo drive over Fast Serial Interface (FSI) using C2000™ real-time controllers. Multi-axis servo drives are used in many applications such as factory automation and robots. The cost per axis, performance and (...)
Design guide: PDF
Schematic: PDF
Reference designs

TIDM-02007 — Dual-axis motor drive using fast current loop (FCL) and SFRA on a single MCU reference design

This reference design presents a dual-axis motor drive using fast current loop (FCL) and software frequency response analyzer (SFRA) technologies on a single C2000 controller. The FCL utilizes dual core (CPU, CLA) parallel processing techniques to achieve a substantial improvement in control (...)
Design guide: PDF
Schematic: PDF
Reference designs

PMP22089 — Half-bridge point-of-load converter reference design with GaN technology

This reference design modifies the inboard transformer turns ratio from 5:1 to 3:1 to reduce input the range. The board supports input voltages from 24 V to 32 V and output voltages between 0.5 V to 1.0 V with output currents up to 40 A. This topology efficiently supports the high step-down ratio (...)
Test report: PDF
Schematic: PDF
Reference designs

PMP4486 — 48Vin Digital POL with 3 Outputs Reference Design

The PMP4486 is a GaN-based reference design solution for telecom and computing applications. The GaN module LMG5200 enables a high efficiency single stage conversion with an input range from 36 to 60V down to 29V, 12V and 1.0V. This design shows the benefits of a GaN based design with high (...)
Test report: PDF
Schematic: PDF
Reference designs

PMP4497 — LMG5200 48V to 1V/40A Single Stage Converter Reference Design

The PMP4497 is a GaN-based reference design solution for the Vcore such as FPGA, ASIC applications. With high integration and low switching loss, the GaN module LMG5200 enables a high efficiency single stage from 48V to 1.0V solution to replace the traditional 2-stage solution. This design shows (...)
Test report: PDF
Schematic: PDF
Package Pins Download
QFM (MOF) 9 View options

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos