Radiation Hardness Assured (RHA) 6.5GHz Ultra Wideband Fully Differential Amplifier

Radiation Hardness Assured (RHA) 6.5GHz Ultra Wideband Fully Differential Amplifier - LMH5401-SP


The LMH5401-SP is a very high-performance, radiation hardened, differential amplifier optimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications. The device is ideal for dc- or ac-coupled applications that may require a single-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC). The LMH5401-SP generates very low levels of second- and third-order distortion when operating in SE-DE or differential-to-differential (DE-DE) mode.

The amplifier is optimized for use in both SE-DE and DE-DE systems. The device has unprecedented usable bandwidth from dc to 2 GHz. The LMH5401-SP can be used for SE-DE conversions in the signal chain without external baluns in a wide range of applications such as test and measurement, broadband communications, and high-speed data acquisition.

A common-mode reference input pin is provided to align the amplifier output common-mode with the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operation is supported when required by the application. A power-down feature is also available for power savings.

This level of performance is achieved at a very low power level of 300 mW when a 5-V supply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, LCCC-14 package for higher performance.


  • QMLV (QML Class V) MIL-PRF-38535 Qualified, SMD 5962-1721401VXC
    • Single Event Latchup (SEL) Immune to
      LET = 85 MeV-cm2/mg
    • Qualified Over the Military Temperature Range (–55°C to 125°C)
  • Gain Bandwidth Product (GBP): 6.5 GHz
  • Excellent Linearity Performance:
    DC to 2 GHz;
  • Slew Rate: 17,500 V/µs
  • Low HD2, HD3 Distortion
    (500 mVPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 100 MHz: HD2 at –91 dBc, HD3 at –95 dBc
    • 200 MHz: HD2 at –86 dBc, HD3 at –85 dBc
    • 500 MHz: HD2 at –80 dBc, HD3 at –80 dBc
    • 1 GHz: HD2 at –53 dBc, HD3 at –70 dBc
    • 2 GHz: HD2 at –68 dBc, HD3 at –56 dBc
  • Low IMD2, IMD3 Distortion
    (1 VPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 500 MHz: IMD2 at –90 dBc, IMD3 at –79 dBc
    • 1 GHz: IMD2 at –80 dBc, IMD3 at –61 dBc
    • 2 GHz: IMD2 at –64 dBc, IMD3 at –42 dBc
  • High OIP2, OIP3. Gp = 8 dB(1)
    • 500 MHz: OIP2 at 91 dBm, OIP3 at 47.7 dBm
    • 1 GHz: OIP2 at 80 dBm, OIP3 at 37.5 dBm
  • Input Voltage Noise: 1.25 nV/√Hz
  • Input Current Noise: 3.5 pA/√Hz
  • Supports Single- and Dual-Supply Operation
  • Current Consumption: 60 mA
  • Power-Down Feature (1)

(1)Power Gain (Gp) = 8 dB; Voltage Gain (Gv) = 17 dB; RLtotal = 200 Ω. See Output Reference Nodes and Gain Nomenclature section for more details.

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Parametrics Compare all products in Operational Amplifiers

Number of Channels (#)
Total Supply Voltage (Min) (+5V=5, +/-5V=10)
Total Supply Voltage (Max) (+5V=5, +/-5V=10)
GBW (Typ) (MHz)
Slew Rate (Typ) (V/us)
Vos (Offset Voltage @ 25C) (Max) (mV)
Iq per channel (Typ) (mA)
Operating Temperature Range (C)
Package Group
Output Current (Typ) (mA)
Offset Drift (Typ) (uV/C)
Vn at 1kHz (Typ) (nV/rtHz)
IIB (Max) (pA)
CMRR (Typ) (dB)
Package Size: mm2:W x L (PKG)
LMH5401-SP THS4511-SP THS4513-SP
1    1    1   
3.15    3.75    3   
5.25    5.25    5.5   
6000    3000    3000   
17500    5100    5100   
No    In to V-    No   
1.2    4    4   
55    39.2    37.7   
Space    Space    Space   
-55 to 125
25 to 25   
-55 to 125    -55 to 125   
LCCC    CFP    CFP   
50    96    96   
0.63    2.3    2.6   
3.8    20    22   
  Fully Differential
Voltage FB   
Fully Differential
Voltage FB   
  15500000    15500000   
72    80    80   
14LCCC: 33 mm2: 5.5 x 6(LCCC)    See datasheet (CFP)    See datasheet (CFP)   

Other qualified versions of LMH5401-SP

Version Part Number Definition
Catalog LMH5401 TI's standard catalog product