Nanopower, 480 nA, 1.6 V RRIO Dual, CMOS input op amp - LPV542

LPV542 (ACTIVE)

Nanopower, 480 nA, 1.6 V RRIO Dual, CMOS input op amp

 

Description

The LPV542 is an ultra-low-power, dual operational amplifier that provides 8kHz of bandwidth from 490nA of quiescent current making it well suited for battery-powered applications such as health and fitness wearables, building automation, and remote sensing nodes.

Each amplifier has a CMOS input stage with pico-amp bias currents which reduces errors commonly introduced in megaohm feedback resistance topologies such as photodiode and charge sense applications. In addition, the input common-mode range extends to the power supply rails and the output swings to within 3 mV of the rails, maintaining the widest dynamic range possible. Likewise, EMI protection is designed into the LPV542 in order to reduce system sensitivity to unwanted RF signals from mobile phones, WiFi, radio transmitters, and tag readers.

The LPV542 operates on a supply voltage as low as 1.6 V, ensuring continuous superior performance in low battery situations. The device is available in an 8-pad, low-profile, leadless 3 mm × 3 mm × 0.45 mm X1SON package and a standard 8 pin VSSOP.

Features

  • Wide Supply Range: 1.6 V to 5.5 V
  • Low Supply Current: 490 nA (typical/channel)
  • Good Offset Voltage: 3 mV (maximum/room)
  • Good TcVos: 1µV/°C (typical)
  • Gain-Bandwidth: 8 kHz (typical)
  • Rail-to-Rail Input and Output
  • Unity-Gain Stable
  • Low Input Bias Current : 1 pA (typ)
  • EMI Hardened
  • Temperature Range: –40°C to 125°C
  • Thin 3 mm × 3 mm × 0.45 mm X1SON package

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Parametrics Compare all products in Ultra-Low-Power Op Amps (<=10uA)

 
Number of Channels (#)
Total Supply Voltage (Min) (+5V=5, +/-5V=10)
Total Supply Voltage (Max) (+5V=5, +/-5V=10)
Iq per channel (Max) (mA)
Iq per channel (Typ) (mA)
Vos (Offset Voltage @ 25C) (Max) (mV)
Offset Drift (Typ) (uV/C)
GBW (Typ) (MHz)
Slew Rate (Typ) (V/us)
Rail-to-Rail
Rating
Operating Temperature Range (C)
Package Group
Features
Package Size: mm2:W x L (PKG)
Vn at 1kHz (Typ) (nV/rtHz)
Output Current (Typ) (mA)
Architecture
Input Bias Current (Max) (pA)
CMRR (Typ) (dB)
LPV542 LPV521 TLV521 TLV522
2    1    1    2   
1.6    1.6    1.7    1.7   
5.5    5.5    5.5    5.5   
0.00085    0.0004    0.0005    0.0008   
0.00048    0.000351    0.00035    0.0005   
3    1    3    4   
1    0.4    1.5    1.5   
0.008    0.0062    0.006    0.008   
0.0037    0.0024    0.0029    0.0037   
In
Out   
In
Out   
In
Out   
In
Out   
Catalog    Catalog    Catalog    Catalog   
-40 to 125    -40 to 125    -40 to 125    -40 to 125   
VSSOP
X1SON   
SC70    SC70    VSSOP   
EMI Hardened    EMI Hardened    Cost Optimized
EMI Hardened   
Cost Optimized
EMI Hardened   
8VSSOP: 15 mm2: 4.9 x 3(VSSOP)
8X1SON: 9 mm2: 3 x 3(X1SON)   
5SC70: 4 mm2: 2.1 x 2(SC70)    5SC70: 4 mm2: 2.1 x 2(SC70)    8VSSOP: 15 mm2: 4.9 x 3(VSSOP)   
250    255    300    300   
30    22    12    5   
CMOS    CMOS    CMOS    CMOS   
1    1       
101    102    100    90   

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