Dual Channel 425nA Precision Nanopower Operational Amplifiers - LPV812

LPV812 (ACTIVE)

Dual Channel 425nA Precision Nanopower Operational Amplifiers

 

Description

The LPV811 (single) and LPV812 (dual) are a ultra-low-power precision operational amplifier family for “Always ON” sensing applications in battery powered wireless and low power wired equipment. With 8 kHz of bandwidth from 425 nA of quiescent current and a trimmed offset voltage to under 300µV, the LPV81x amplifiers provide the required precision while minimizing power consumption in equipment such as gas detectors and portable electronic devices where operational battery-life is critical.

In addition to being ultra-low-power, the LPV81x amplifiers have CMOS input stages with fempto-amp bias currents for impedance source applications. The LPV81x amplifiers also feature a negative-rail sensing input stage and a rail-to-rail output stage that swings within millivolts of the rails, maintaining the widest dynamic range possible. EMI protection is designed into the LPV81x in order to reduce system sensitivity to unwanted RF signals from mobile phones, WiFi, radio transmitters, and tag readers.

Features

  • Nanopower Supply Current: 425 nA/channel
  • Offset Voltage: 300 µV (max)
  • TcVos: 1 µV/°C
  • Gain-Bandwidth: 8 kHz
  • Unity-Gain Stable
  • Low Input Bias Current : 100 fA
  • Wide Supply Range: 1.6 V to 5.5 V
  • Rail-to-Rail Output
  • No Output Reversals
  • EMI Protection
  • Temperature Range: –40°C to 125°C
  • Industry Standard Packages:
    • Single in 5-pin SOT-23
    • Dual in 8-pin VSSOP

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Parametrics Compare all products in Ultra-Low-Power Op Amps (<=10uA)

 
Number of Channels (#)
Total Supply Voltage (Min) (+5V=5, +/-5V=10)
Total Supply Voltage (Max) (+5V=5, +/-5V=10)
Iq per channel (Max) (mA)
Iq per channel (Typ) (mA)
Vos (Offset Voltage @ 25C) (Max) (mV)
Offset Drift (Typ) (uV/C)
GBW (Typ) (MHz)
Slew Rate (Typ) (V/us)
Rail-to-Rail
Rating
Operating Temperature Range (C)
Package Group
Additional Features
Package Size: mm2:W x L (PKG)
Vn at 1kHz (Typ) (nV/rtHz)
Output Current (Typ) (mA)
Architecture
CMRR (Typ) (dB)
LPV812 LPV801 LPV802 LPV811 TLV8802 TLV8811 TLV8812
2    1    2    1    2    1    2   
1.6    1.6    1.6    1.6    1.7    1.7    1.7   
5.5    5.5    5.5    5.5    5.5    5.5    5.5   
0.000495    0.00054    0.000415    0.00054    0.00065    0.00075    0.0007   
0.000425    0.00045    0.00032    0.00045    0.00032    0.00045    0.000425   
0.3    3.5    3.5    0.37    4.5    0.55    0.5   
1    1.5    1.5    1    1    1    1   
0.008    0.008    0.008    0.008    0.006    0.006    0.006   
0.0017    0.0018    0.0018    0.0017    0.0015    0.0015    0.0015   
In to V-
Out   
In to V-
Out   
In to V-
Out   
In to V-
Out   
In to V-
Out   
In to V-
Out   
In to V-
Out   
Catalog    Catalog    Catalog    Catalog    Catalog    Catalog    Catalog   
-40 to 125    -40 to 125    -40 to 125    -40 to 125    -40 to 125    -40 to 125    -40 to 125   
VSSOP    SOT-23    VSSOP    SOT-23    VSSOP    SOT-23    VSSOP   
EMI Hardened    EMI Hardened    EMI Hardened    EMI Hardened    Cost Optimized
EMI Hardened   
Cost Optimized
EMI Hardened   
Cost Optimized
EMI Hardened   
8VSSOP: 15 mm2: 4.9 x 3(VSSOP)    5SOT-23: 8 mm2: 2.8 x 2.9(SOT-23)    8VSSOP: 15 mm2: 4.9 x 3(VSSOP)    5SOT-23: 8 mm2: 2.8 x 2.9(SOT-23)    8VSSOP: 15 mm2: 4.9 x 3(VSSOP)    5SOT-23: 8 mm2: 2.8 x 2.9(SOT-23)    8VSSOP: 15 mm2: 4.9 x 3(VSSOP)   
420    420    420    420    450    450    450   
4.7    4.7    4.7    4.7    4.7    4.7    4.7   
CMOS    CMOS    CMOS    CMOS    CMOS    CMOS    CMOS   
98    98    98    95    90    95    98   

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