The SN74CB3Q3305 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3305 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.
(1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, SCDA008.
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|Number of Channels (#)|
|Vdd (Min) (V)|
|Vdd (Max) (V)|
|Supply Range (Max)|
|Ron (Typ) (Ohms)|
|Operating Temperature Range (C)|
|Package Size: mm2:W x L (PKG)|
|Vss (Max) (V)|
|Vss (Min) (V)|
|Ron (Max) (Ohms)|
|Input/Ouput Voltage (Min) (V)|
|Input/Ouput Voltage (Max) (V)|
|Input/Output Continuous Current (Max) (mA)|
|Supply Current (Typ) (uA)|
|Supply Current (Max) (uA)|
|OFF-state leakage current (Max) (µA)|
|Input/Output ON-state Capacitance (Typ) (pF)|
|Input/Output OFF-state Capacitance (Typ) (pF)|
|ESD Charged Device Model (kV)|
|ESD HBM (kV)|
|VIL (Max) (V)|
|VIH (Min) (V)|
|-40 to 85|
| TSSOP |
| 8TSSOP: 19 mm2: 6.4 x 3(TSSOP) |
8VSSOP: 6 mm2: 3.1 x 2(VSSOP)
|Powered off protection|