TLV4314 3-MHz, Low-Power, Low-Noise, RRIO, CMOS Operational Amplifier for Cost-Sensitive Systems | TI.com

TLV4314 (ACTIVE)

3-MHz, Low-Power, Low-Noise, RRIO, CMOS Operational Amplifier for Cost-Sensitive Systems

3-MHz, Low-Power, Low-Noise, RRIO, CMOS Operational Amplifier for Cost-Sensitive Systems - TLV4314
 

Description

The TLV314 family of single-, dual-, and quad-channel operational amplifiers represents a new generation of low-power, general-purpose operational amplifiers. Rail-to-rail input and output swings (RRIO), low quiescent current (150 µA typically at 5 V) combine with a wide bandwidth of 3 MHz to make this family very attractive for a variety of battery-powered applications that require a good balance between cost and performance. Additionally, the TLV314 family architecture achieves a low input bias current of 1 pA, allowing for applications with MΩ source impedances.

The robust design of the TLV314 devices provides ease-of-use to the circuit designer: unity-gain stability, RRIO, capacitive loads of up to 300 pF, an integrated RF/EMI rejection filter, no phase reversal in overdrive conditions, and high electrostatic discharge (ESD) protection (4-kV HBM).

These devices are optimized for low-voltage operation as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V), and are specified over the extended industrial temperature range of –40°C to +125°C.

The TLV314 (single) is available in both 5-pin SC70 and SOT-23 packages. The TLV2314 (dual) is offered in 8-pin SOIC and VSSOP packages. The quad-channel TLV4314 is offered in a 14-pin TSSOP package.

Features

  • Low Offset Voltage: 0.75 mV (typ)
  • Low Input Bias Current: 1 pA (typ)
  • Wide Supply Range: 1.8 V to 5.5 V
  • Rail-to-Rail Input and Output
  • Gain Bandwidth: 3 MHz
  • Low IQ: 250 µA/Ch (max)
  • Low Noise: 16 nV/√Hz at 1 kHz
  • Internal RF/EMI Filter
  • Extended Temperature Range:
    –40°C to +125°C

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Parametrics Compare all products in General-Purpose Op Amps

 
Number of Channels (#)
Total Supply Voltage (Min) (+5V=5, +/-5V=10)
Total Supply Voltage (Max) (+5V=5, +/-5V=10)
GBW (Typ) (MHz)
Slew Rate (Typ) (V/us)
Rail-to-Rail
Vos (Offset Voltage @ 25C) (Max) (mV)
Iq per channel (Typ) (mA)
Vn at 1kHz (Typ) (nV/rtHz)
Rating
Operating Temperature Range (C)
Package Group
Package Size: mm2:W x L (PKG)
Offset Drift (Typ) (uV/C)
Features
Input Bias Current (Max) (pA)
CMRR (Typ) (dB)
Output Current (Typ) (mA)
Architecture
TLV4314 TLV2314 TLV314
4     2     1    
1.8     1.8     1.8    
5.5     5.5     5.5    
3     3     3    
1.5     1.5     1.5    
In
Out    
In
Out    
In
Out    
3     3     3    
0.15     0.15     0.15    
16     16     16    
Catalog     Catalog     Catalog    
-40 to 125     -40 to 125     -40 to 125    
TSSOP     SOIC
VSSOP    
SC70
SOT-23    
14TSSOP: 32 mm2: 6.4 x 5(TSSOP)     8SOIC: 29 mm2: 6 x 4.9(SOIC)
8VSSOP: 15 mm2: 4.9 x 3(VSSOP)    
5SC70: 4 mm2: 2.1 x 2(SC70)
5SOT-23: 8 mm2: 2.8 x 2.9(SOT-23)    
2     2     2    
Cost Optimized
EMI Hardened    
Cost Optimized
EMI Hardened    
Cost Optimized
EMI Hardened
Small Size    
96        
96     96     96    
20     20     20    
CMOS     CMOS     CMOS    

Other qualified versions of TLV4314

Version Part Number Definition
Automotive TLV4314-Q1 Q100 devices qualified for high-reliability automotive applications targeting zero defects