The UCC21220 device is an isolated dual-channel gate driver with 4-A peak-source and 6-A peak-sink current. It is designed to drive power MOSFET, IGBT, and GaN transistors with the best-in-class dynamic performance.
The device can be configured as two low-side drivers, two high-side drivers, or half-bridge drivers. Two outputs can be paralleled to form a single driver which doubles the drive strength for heavy load conditions without internal shoot-through due to the best-in-class delay matching performance.
The input side is isolated from the two output drivers by a 3.0-kVRMS isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI).
Protection features include: DIS pin shuts down both outputs simultaneously when it is set high; INA/B pin rejects input transient shorter than 5-ns; both inputs and outputs can withstand –2-V spikes for 200-ns, all supplies have undervoltage lockout (UVLO), and active pull down protection clamps the output below 2.1-V when unpowered or floated.
With these features, the device enables high efficiency, high power density, and robustness in a wide variety of power applications.
All trademarks are the property of their respective owners.
|Isolation Rating (Vrms)|
|DIN V VDE V 0884-10 Transient Overvoltage Rating (Vpk)|
|DIN V VDE V 0884-10 Working Voltage (Vpk)|
|Number of Channels (#)|
|Output VCC/VDD (Max) (V)|
|Output VCC/VDD (Min) (V)|
|Input VCC (Min) (V)|
|Input VCC (Max) (V)|
|Peak Output Current (A)|
|Prop Delay (ns)|
|Prop Delay (Max) (ns)|
|Operating Temperature Range (C)|
| MOSFET |
| MOSFET |
|MOSFET|| MOSFET |
|-40 to 125||-40 to 125||-40 to 125||-40 to 125|
|Order Now||Order Now||Order Now||Order Now|