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High-Speed Processes

Speed-critical applications in telecommunications and other areas demand extremely high switching speeds that can only be achieved by adding bipolar transistors to a high-performance analog CMOS process. TI’s leadership in developing BiCMOS processes gives us an edge in creating high-speed analog and mixed-signal products such as high-resolution data converters that feature a wide dynamic range and high amplifier bandwidth. Superior speed, crosstalk and jitter capabilities improve the performance of interface devices such as buffer-translators, crosspoint switches and equalizers.

Products such as these complement advanced digital signal processors (DSPs) in wireless infrastructure equipment such as base stations and consumer electronics equipment, providing more channel capacity and wider bandwidth packaged into less space.

BiCom3

A Cross-Sectional View of BiCom3 NPN and PNP Transistors

The BiCom3 High-Speed BiCMOS process is designed for exceptionally high-frequency operation in signal conditioning and data conversion. Adding the speed of silicon-germanium (SiGe) bipolar transistors to 5-V, 0.35-micron CMOS logic, the BiCom3 process is designed with the best high performance component set. As the industry’s first production process to feature complementary SiGe PNP and NPN transistors, BiCom3 offers high voltage, high transistor gain, high fT (maximum unity gain frequency), low capacitance for low THD and low power consumption. All of these features are critical to wireless, as well as other communications equipment. Other features include MIM capacitors, trench isolation for circuit protection, and nickel-chromium-aluminum (NiCrAl) thin-film resistors with low sheet resistance (RS) to handle high currents. Silicon-on-insulator (SOI) techniques provide low, highly linear capacitance and improve isolation and speed.

Leveraging the BiCom3 process is the THS45xx high-speed, low noise, low distortion and fully differential amplifiers. This family of devices drives high-speed analog-to-digital converters (ADC) in demanding applications such as test and measurement, medical imaging, wireless infrastructure and industrial applications.

TI’s ADS5440 was also developed in BiCom3. This 13-bit, 210MSPS analog-to-digital converter (ADC) features 68 dB signal-to-noise ratio (SNR) and 79 dB spurious-free dynamic range (SFDR), at the maximum sample rate of 210MSPS and an input frequency of 230MHz. Breakthrough dynamic performance achieved by the new ADS5440 enables improved receiver performance in a multitude of applications, including software-defined radios, basestation power amplifier linearization systems, as well as test and measurement systems.

Other products using BiCom3 include TMDS341 that provides best-in-class signal conditioning and switching for HDMI and DVI digital video. It is a three-port device that supports four Transition Minimized Differential Signaling (TMDS) channels, one hot plug detector and an I²C interface on each port. Each TMDS channel allows signaling rates up to 1.65 Gbps. The TMDS341 provides fixed, 8-dB input equalization and selectable, 3-dB output de-emphasis to optimize system performance through 5-m or longer DVI-compliant cables.

The SN65LVCP40 data buffer/signal conditioner, with a dual multiplexer, allows designers of communications systems to upgrade 1-Gbps systems to 4-Gbps without redesigning their backplanes. The LVCP40 provides four selectable levels of output pre-emphasis. Receiver equalization on the inputs compensates for intersymbol interference (ISI) effects. The equalization is optimized to compensate for a 20-inch FR-4 backplane trace with 5-dB, high-frequency loss between 375-MHz and 1.875-MHz.

For more information:

  • BiCMOS Technology for High-Speed Precision Analog White Paper (bctm_03.pdf, 361 KB)
    19 Apr 2006 Download
  • Enhanced 5V Complementary SiGe BiCMOS Technology White Paper (ecs_04.pdf, 128 KB)
    19 Apr 2006 Download