High Power
All systems require operating power, and TI devotes considerable
effort to developing the processes needed for power management,
even in high-voltage systems. Power management and power-integrated
control ICs require a wide variety of functions, including
high-voltage bipolar transistors, logic for control, high-quality
passive components, high-voltage field-effect transistors
(FETs) with low on-resistance, isolation of high-voltage circuits,
non-volatile memory (NVM) for analog trim and low-resistance
power metal interconnect for the high-current power layer.
Both LBC7 and LBC5 LDMOS devices offer state-of-the-art specific
ON-resistance (Rsp) vs BV performance.
Power BiCMOS
Examples of TI’s Power BiCMOS processes include LBC5
and LBC7. Built on a 0.25 micron CMOS technology, the LBC7
process is capable of integrating a wide variety of components,
including power transistors, CMOS logic, bipolar transistors
and passives, enabling the full range of power, control and
protective circuitry used in power management devices. Lateral
Double-diffused MOS (LDMOS) transistors support high voltages
of up to 30 V with low on-resistance. Thick copper metal significantly
reduces resistance for high current carrying capability, and
bonding over active circuitry moves high-currents off-chip
quickly. Special LDMOS device construction insures a large,
safe operating area (SOA), which protects the device and improves
reliability while supporting high-power operation.
The LBC5 process, featuring the same components as LBC7 but
based on 0.35 micron CMOS, can support voltages of up to 80
V, making it suitable for demanding automotive, industrial
and telecommunications applications. Using other advanced
power processes, TI has the capability of producing ICs that
will handle even higher voltages. Future process developments
will add even greater control functionality to existing capabilities.
TI’s advanced power LBC7 BiCMOS process includes TI’s
bq24721,
an SRBus battery charge IC for notebooks and multicell portable
electronics. The bq26150
battery management IC that authenticates battery packs used
in PDAs, digital still cameras, notebooks and other portable
devices; and the TPS62110
synchronous, step down converter with integrated FETs.
TI’s LBC5 process is the foundation for two high-performance,
digital-amplifier power stages with improved production systems,
the TAS5152
and TAS5186.
LBC5 is also a key enabler of TI’s TPA3101D2,
a 10-W stereo class-D audio power amplifier for driving bridge
tied stereo speakers.
For more information:
- BiCMOS-DMOS Process Technology White Paper (ispsd_04.pdf, 289 KB)
10 Mar 2006 Download
- LDMOS for LBC5 Technology White Paper (ispsd_05.pdf, 637 KB)
10 Mar 2006 Download
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