Texas
Instruments has been a leading contributor in the field of
semiconductor reliability for many years. Our staff is noted
for being among the best in the world. It's no wonder that
maintaining and improving product reliability is an essential
part of what we do at TI.
Reliability engineering begins as soon as test structures
can be built with a new process, and it continues throughout
the lifetime of the process. We start with an assessment of
the fundamental physics of the materials and components used
in a process. We then design reliability models that are among
the most comprehensive in the industry. These models help
us ensure the reliability of our designs by taking into account
all the process complexities and operating environments necessary
to meet our customer requirements.
Among the critical factors that TI reliability engineers
have to examine: the migration of atoms in interconnect metal,
the time-dependent dielectric breakdown of gates and low-K
films, the injection of electrons into gates that create channel
hot carriers, and the negative bias temperature instability
that breaks down conductivity because of heat.
Modeling the fundamental device physics alerts us to process
modifications we must make to minimize these effects and extend
the useful life of the product. With the smaller design rules
and greater complexity of new CMOS processes at 65-nm and
below, the challenges of creating valid reliability models
continue to increase—even as the models become more
important to the success of our products.
The effectiveness of reliability modeling and process control
is measured by TI's sophisticated quality methodology, which
is tied closely to market and business requirements. Statistical
quality control enables us to minimize defects and helps us
keep process distributions tight by analyzing margins to specification.
In the end, quality and reliability controls are reflected
in the figure of merit (FOM), a composite measurement that
reflects all aspects of transistor performance improvement
over time. The FOM, which is continually increasing, shows
us how well we are improving our processes from generation
to generation.
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