The ISO5852SDWEVM-017 is a compact, dual chanel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for half-bridge Sic MOSFET and IGBT Power Modules in standard 62-mm package. This TI EVM is based on 5.7-kVrms reinforced isolation driver IC ISO5852SDW in SOIC-16DW package with 8.0 mm creepage and clearance. The EVM includes SN6505B based isolated bias supplies and temperature and bus voltage isolated monitoring by amplifiers AMC1401.
| Type | Title | Date | ||
|---|---|---|---|---|
| * | User guide | ISO5852SDW Driving and Protecting SiC and IGBT Power Modules | 24 May 2018 | |
| Data sheet | ISO5852S High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features datasheet (Rev. C) | PDF | HTML | 30 May 2023 | |
| Certificate | ISO5852SDWEVM-017 EU Declaration of Conformity (DoC) | 02 Jan 2019 |
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