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LMG3411EVM-018

LMG3411R050 600-V 50mΩ GaN with cycle-by-cycle overcurrent protection half-bridge daughter card

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LMG3411EVM-018

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Overview

LMG3411EVM-018 configures two LMG3411R050 GaN FETs in a half bridge with cycle by cycle over current protection function and all the necessary auxiliary peripheral circuitry.  This EVM is designed to work in conjunction with larger systems.

Features
  • Input voltage operates up to 600V
  • Simple open loop design to evaluate performance of LMG3411R050
  • Single PWM input on board for PWM signal with 50 ns dead time
  • Cycle by cycle over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes
Gallium nitride (GaN) power stages
LMG3411R050 — 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection
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Evaluating LMG3411R050 GaN FET power stage

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Daughter card

LMG3411EVM-018 — LMG3411R050 600-V 50mΩ GaN with cycle-by-cycle overcurrent protection half-bridge daughter card

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Design files

download LMG3411EVM-018 Gerber Files
SNOC047.ZIP (565 KB)

Technical documentation

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Type Title Date
* EVM User's guide Using the LMG341xEVM-018 Half-bridge and LMG34XX-BB--EVM breakout board EVM (Rev. A) 08 Mar 2019
Data sheet LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection datasheet (Rev. B) PDF | HTML 16 Jan 2020
Certificate LMG3411EVM-018 EU Declaration of Conformity (DoC) 12 Mar 2019

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