Gallium nitride (GaN) power stages
Maximize power density and efficiency with our portfolio of GaN power devices for every power level
New products
600V 50mΩ GaN FET with integrated driver, protection and zero-voltage detection
Approx. price (USD) 1ku | 7.94
100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection
Approx. price (USD) 1ku | 3.75
600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection
Approx. price (USD) 1ku | 11.844
100V 1.7mΩ GaN FET with integrated driver
Approx. price (USD) 1ku | 4.9
650-V 270-mΩ GaN FET with integrated driver and protection
Approx. price (USD) 1ku | 2.2
650-V 120-mΩ GaN FET with integrated driver and protection
Approx. price (USD) 1ku | 3.25
Advantages of TI GaN technology
Faster switching speed than discrete GaN FETs
Our GaN FETs with integrated drivers can reach switching speeds of 150 V/ns. These switching speed, combined with a low-inductance package, reduce losses, enable clean switching and minimize ringing.
Smaller magnetics, higher power density
Enabled by faster switching speeds, our GaN devices can help you achieve switching frequencies over 500 kHz, which results in up to 60% smaller magnetics, enhanced performance and lower system cost.
Built for reliability
Our GaN devices are designed to keep high-voltage systems safe thanks to a proprietary GaN-on-Si process, more than 40 million hours of reliability testing and protection features.
Dedicated design tools and resources
Shorten your time to market with our GaN design resources, including power loss calculators, PLECS models for circuit simulation and evaluation boards for testing and operation in larger systems.
Why choose GaN
Understanding GaN technology
GaN offers higher power density, more reliable operation and improved efficiency over traditional silicon-only based solutions. Head to our technology page to learn more about GaN as a power transistor technology, discover featured GaN applications, hear from our customers and see for yourself how our GaN products can help you minimize the weight, size and cost of your next power design.
Tools and resources to assist with your design
We offer numerous resources to assist with your design and help you choose the right device for your application. Our power loss calculation tools can help you with product selection by showing power losses for selected devices at user-specified parameters. Our PLECS models allow you to simulate the operation of GaN devices to estimate the FET junction temperature and allow for an adjustable slew-rate during turn-on. Our half-bridge evaluation daughter cards are also available for testing and operation in larger systems.
Technical resources
Thermal Performance of QFN12x12 Package for 600V, GaN Power Stage (Rev. A)
Direct-drive configuration for GaN devices (Rev. A)
Third quadrant operation of GaN
Design & development resources
11-kW, bidirectional, three-phase ANPC based on GaN reference design
This reference design provides a design template for implementing a three-level, three-phase, gallium nitride (GaN) based ANPC inverter power stage. The use of fast switching power devices makes it possible to switch at a higher frequency of 100 kHz, reducing the size of magnetics for the filter (...)