Cart GaN FET Drivers Deliver New Levels of Power Density over MOSFETs
TI Helps You Leverage the Power of GaN
Enhancement-mode Gallium Nitride (GaN) power FETs can provide significant power density benefits over silicon MOSFETs in power converters but pose new challenges for designers. TI brings simplicity to solve the challenges of driving GaN power FETs with a family of drivers – UCC27611, a 4A/6A high-speed, optimized single gate driver, LM5114, a 7.6A single low-side driver with independent source and sink outputs – and the award-winning LM5113, the industry's first 100V integrated half-bridge driver for GaN power FETs. Compared to discrete implementations, these drivers provide significant PCB area savings to achieve industry-best power density and efficiency while simplifying the task of driving GaN FETs reliably.
Benefits of TI GaN FET driver solutions:
- Increased power density
- Maximizes dV/dt immunity, prevents accidental low-side turn-on
- Independent source/sink pins optimize turn-on and turn-off times to enhance efficiency and reduce noise
Challenges of GaN FETs:
- Low threshold voltage
- Stringent gate-source voltage drive requirements
- Need to limit high-side FET to 6V
- Prevent erratic switching behavior with high dV/dt transients
Benefits of GaN FETs:
- Much lower Rdson and Qg
- Higher input voltages
- Greater efficiencies
- Faster switching frequencies
- Ultra-small package footprint for higher density power converters
LM5114 & LM5113 GaN FET Driver Demos
UCC27611 – 4A/6A High-Speed 5V Optimized Single Gate Driver
- 4.0-V to 18-V single supply VDD range
- Drive voltage VREF regulated to 5-V
- 4-A peak source and 6-A peak sink drive current
- 1-Ω and 0.35-Ω pull-up and pull-down resistance
- Split output configuration
- Fast propagation delays – 14-ns typical
- 2 mm x 2 mm WSON-6 package with exposed thermal and ground pad
LM5114 – Single 7.6A Peak Current Low-Side Gate Driver
- Independent source and sink outputs for controllable rise and fall times
- 4 to 12.6V single power supply
- 7.6A/1.3A peak sink/source drive current
- 0.23Ω open-drain pull-down sink output
- 2Ω open-drain pull-up source output
- 12 ns (typical) propagation delay
- Matching delay time between inverting and non-inverting inputs
- Drives GaN FETs, EPC eGAN® FETs, & MOSFETS
- Product Info:
LM5113 - 5A, 100V Half-Bridge Gate Driver for Enhancement-Mode GaN FETs
- Independent high and low TTL logic inputs
- 1.2A / 5A peak source/sink current
- High-side floating bias voltage rail operates up to 100V
- Internal bootstrap supply voltage clamping
- Split outputs for adjustable turn-on/turn-off strength
- 0.5Ω / 2Ω pull-down/pull-up resistance
- Fast propagation times—30 ns typical
- Drives EPC eGAN® FETs Learn more...
- Product Info:
LM5113 Bootstrap Voltage Regulation
The LM5113 & LM5114 GaN FET drivers support EPC eGAN® FETs. Learn more...
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