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LMG3622

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650V 120mΩ GaN FET with integrated driver, protection and current sensing

Product details

VDS (max) (V) 650 RDS(on) (mΩ) 120 ID (max) (A) 8.5 Features Bottom-side cooled, Current sense, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, USB C/PD compatible, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 650 RDS(on) (mΩ) 120 ID (max) (A) 8.5 Features Bottom-side cooled, Current sense, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, USB C/PD compatible, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (REQ) 38 42.4 mm² 8 x 5.3
  • 650-V 120-mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Current-sense emulation with high bandwidth and high accuracy
  • Cycle-by-cycle overcurrent protection
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 240 µA
  • AUX standby quiescent current: 50 µA
  • Maximum supply and input logic pin voltage: 26 V
  • 8 mm × 5.3 mm QFN package with thermal pad
  • 650-V 120-mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Current-sense emulation with high bandwidth and high accuracy
  • Cycle-by-cycle overcurrent protection
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 240 µA
  • AUX standby quiescent current: 50 µA
  • Maximum supply and input logic pin voltage: 26 V
  • 8 mm × 5.3 mm QFN package with thermal pad

The LMG3622 is a 650-V 120-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3622 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control. The current-sense emulation reduces power dissipation compared to the traditional currentsense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The LMG3622 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO), cycle-by-cycle current limit, and overtemperature protection. Overtemperature protection is reported with the opendrain FLT pin.

The LMG3622 is a 650-V 120-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3622 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control. The current-sense emulation reduces power dissipation compared to the traditional currentsense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The LMG3622 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO), cycle-by-cycle current limit, and overtemperature protection. Overtemperature protection is reported with the opendrain FLT pin.

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Type Title Date
* Data sheet LMG3622650-V120-mΩ GaN FET With Integrated Driverand Current-Sense Emulation datasheet (Rev. A) PDF | HTML 14 Nov 2023
Technical article The benefits of low-power GaN in common AC/DC power topologies PDF | HTML 30 Jan 2024
Application brief Maximize System Efficiency With Integrated Current Sensing From TI GaN PDF | HTML 30 Nov 2023
Product overview Designing With the LMG362x Family of Low-Power GaN FETs PDF | HTML 28 Nov 2023
Certificate LMG3622EVM-082 EU Declaration of Conformity (DoC) 21 Aug 2023

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