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TPD1E0B04

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0.13-pF, ±3.6-V, ±8-kV ESD protection diode in 0402 & 0201 packages for USB-C & Antenna

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Data sheet

TPD1E0B04

ACTIVE
Data sheet Order now

Product details

Package name DFN-0603 (X2SON), DFN-1006 (X1SON) Peak pulse power (8/20 μs) (max) (W) 15 Vrwm (V) 3.6 Bi-/uni-directional Bi-directional Number of channels 1 IO capacitance (typ) (pF) 0.13 IEC 61000-4-2 contact (±V) 8000 IEC 61000-4-5 (A) 1.7 Clamping voltage (V) 7.2 Dynamic resistance (typ) 1 Interface type USB Type-C Breakdown voltage (min) (V) 6.7 IO leakage current (max) (nA) 10 Rating Catalog Operating temperature range (°C) -40 to 125
Package name DFN-0603 (X2SON), DFN-1006 (X1SON) Peak pulse power (8/20 μs) (max) (W) 15 Vrwm (V) 3.6 Bi-/uni-directional Bi-directional Number of channels 1 IO capacitance (typ) (pF) 0.13 IEC 61000-4-2 contact (±V) 8000 IEC 61000-4-5 (A) 1.7 Clamping voltage (V) 7.2 Dynamic resistance (typ) 1 Interface type USB Type-C Breakdown voltage (min) (V) 6.7 IO leakage current (max) (nA) 10 Rating Catalog Operating temperature range (°C) -40 to 125
X1SON (DPY) 2 0.6 mm² 1 x 0.6 X2SON (DPL) 2 0.18 mm² 0.6 x 0.3
  • IEC 61000-4-2 Level 4 (Contact) ESD Protection
    • ±8-kV Contact Discharge
    • ±9-kV Air Gap Discharge
  • IEC 61000-4-4 EFT Protection
    • 80 A (5/50 ns)
  • IEC 61000-4-5 Surge Protection
    • 1.7 A (8/20 µs)
  • IO Capacitance: 0.13 to 0.15 pF (Typical), 0.15 to 0.18 pF (Maximum)
  • DC Breakdown Voltage: 6.7 V (Typical)
  • Ultra Low Leakage Current: 10 nA (Maximum)
  • Low ESD Clamping Voltage
  • Supports High Speed Interfaces up to 20 Gbps
  • Low Insertion Loss: >30 GHz (–3 dB Bandwidth)
  • Industrial Temperature Range: –40°C to +125°C
  • Ultra-small 0201 and 0402 footprints
  • IEC 61000-4-2 Level 4 (Contact) ESD Protection
    • ±8-kV Contact Discharge
    • ±9-kV Air Gap Discharge
  • IEC 61000-4-4 EFT Protection
    • 80 A (5/50 ns)
  • IEC 61000-4-5 Surge Protection
    • 1.7 A (8/20 µs)
  • IO Capacitance: 0.13 to 0.15 pF (Typical), 0.15 to 0.18 pF (Maximum)
  • DC Breakdown Voltage: 6.7 V (Typical)
  • Ultra Low Leakage Current: 10 nA (Maximum)
  • Low ESD Clamping Voltage
  • Supports High Speed Interfaces up to 20 Gbps
  • Low Insertion Loss: >30 GHz (–3 dB Bandwidth)
  • Industrial Temperature Range: –40°C to +125°C
  • Ultra-small 0201 and 0402 footprints

The TPD1E0B04 is a bidirectional TVS ESD protection diode array for USB Type-C and Thunderbolt 3 circuit protection. The TPD1E0B04 is rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4).

This device features a 0.13-pF IO capacitance per channel (DPL package) making it ideal for protecting high-speed interfaces up to 20 Gbps such as USB 3.1 Gen 2, Thunderbolt 3, and Antenna. The low dynamic resistance and low clamping voltage ensure system level protection against transient events.

The TPD1E0B04 is offered in the industry standard 0201 (DPL) and 0402 (DPY) packages.

The TPD1E0B04 is a bidirectional TVS ESD protection diode array for USB Type-C and Thunderbolt 3 circuit protection. The TPD1E0B04 is rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4).

This device features a 0.13-pF IO capacitance per channel (DPL package) making it ideal for protecting high-speed interfaces up to 20 Gbps such as USB 3.1 Gen 2, Thunderbolt 3, and Antenna. The low dynamic resistance and low clamping voltage ensure system level protection against transient events.

The TPD1E0B04 is offered in the industry standard 0201 (DPL) and 0402 (DPY) packages.
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Technical documentation

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Type Title Date
* Data sheet TPD1E0B04 1-Channel ESD Protection Diode for USB Type-C and Antenna Protection datasheet (Rev. B) PDF | HTML 16 Dec 2016
Application note ESD and Surge Protection for USB Interfaces (Rev. B) PDF | HTML 11 Jan 2024
Selection guide System-Level ESD Protection Guide (Rev. D) 07 Sep 2022
Application note ESD Packaging and Layout Guide (Rev. B) PDF | HTML 18 Aug 2022
Technical article ESD fundamentals, part 4: ESD capacitance PDF | HTML 12 Feb 2018
Technical article The dangers of deep snap-back ESD circuit-protection diodes PDF | HTML 12 Sep 2016
Application note Picking ESD Diodes for Ultra High-Speed Data Lines 29 Jun 2016

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TPD1E0B04 IBIS Model

SLVMBO4.ZIP (2 KB) - IBIS Model
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Simulation model

TPD1E0B04 S-Parameter Model

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X1SON (DPY) 2 Ultra Librarian
X2SON (DPL) 2 Ultra Librarian
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