SLUSAH0F October   2011  – November 2019 BQ25504

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Solar Application Circuit
  4. Revision History
  5. Description (continued)
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Maximum Power Point Tracking
      2. 8.3.2 Battery Undervoltage Protection
      3. 8.3.3 Battery Overvoltage Protection
      4. 8.3.4 Battery Voltage in Operating Range (VBAT_OK Output)
      5. 8.3.5 Nano-Power Management and Efficiency
    4. 8.4 Device Functional Modes
      1. 8.4.1 Cold-Start Operation (VSTOR < VSTOR_CHGEN, VIN_DC > VIN(CS) and PIN > PIN(CS))
      2. 8.4.2 Main Boost Charger Enabled (VSTOR > VSTOR_CHGEN, VIN_DC > VIN(DC) and EN = LOW )
      3. 8.4.3 Thermal Shutdown
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Storage Element Selection
      2. 9.1.2 Inductor Selection
      3. 9.1.3 Capacitor Selection
        1. 9.1.3.1 VREF_SAMP Capacitance
        2. 9.1.3.2 VIN_DC Capacitance
        3. 9.1.3.3 VSTOR Capacitance
        4. 9.1.3.4 Additional Capacitance on VSTOR or VBAT
    2. 9.2 Typical Applications
      1. 9.2.1 Solar Application Circuit
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 TEG Application Circuit
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 MPPT Disabled, Low Impedance Source Application Circuit
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
      2. 12.1.2 Zip Files
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

Over recommended temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for conditions of VIN_DC = 1.2V, VBAT = VSTOR = 3V. External components LBST = 22 µH, CHVR = 4.7 µF CSTOR= 4.7 µF.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BOOST CONVERTER \ CHARGER STAGE
VIN(DC) DC input voltage into VIN_DC Cold-start completed 130 3000 mV
IIN(DC) Peak Current flowing from VIN into VIN_DC input 0.5V < VIN < 3 V; VSTOR = 4.2 V 200 300 mA
PIN Input power range for normal charging VBAT > VIN_DC; VIN_DC = 0.5 V 0.01 300 mW
VIN(CS) Cold-start Voltage. Input voltage that will start charging of VSTOR VBAT < VBAT_UV; VSTOR = 0 V;
0°C < TA < 85°C
600 700 mV
PIN(CS) Minimum cold-start input power to start normal charging VBAT < VSTOR(CHGEN)
VIN_DC clamped to VIN_CS by cold start circuit
VBAT = 100 µF ceramic
15 µW
VSTOR_CHGEN Voltage on VSTOR when cold start operation ends and normal charger operation begins 1.6 1.77 1.95 V
RBAT(on) Resistance of switch between VBAT and VSTOR when turned on. VBAT = 4.2 V; VSTOR load = 50 mA 2 Ω
RDS(on) Charger Low Side switch ON resistance VBAT = 2.1 V 2 Ω
VBAT = 4.2 V 2
Charger rectifier High Side switch ON resistance VBAT = 2.1 V 5 Ω
VBAT = 4.2 V 5
fSW_BST Boost converter mode switching frequency 1 MHz
BATTERY MANAGEMENT
IVBAT Leakage on VBAT pin VBAT = 2.1 V; VBAT_UV = 2.3 V, TJ = 25°C VSTOR = 0 V 1 5 nA
VBAT = 2.1 V; VBAT_UV = 2.3 V,
–40°C < TJ < 65°C, VSTOR = 0 V
80 nA
IVSTOR VSTOR Quiescent current Charger Shutdown in UV Condition VIN_DC = 0V;
VBAT < VBAT_UV = 2.4V;
VSTOR = 2.2V, No load on VBAT
330 750 nA
VSTOR Quiescent current Charger Shutdown in OV Condition VIN_DC = 0V,
VBAT > VBAT_OV, VSTOR = 4.25,
No load on VBAT
570 1400 nA
VBAT_OV Programmable voltage range for overvoltage threshold (Battery voltage is rising) VSTOR increasing 2.5 5.25 V
VBAT_OV_HYST Battery voltage overvoltage hysteresis threshold (Battery voltage is falling), internal threshold VSTOR decreasing 18 35 89 mV
VBAT_UV Programmable voltage range for under voltage threshold (Battery voltage is falling) VSTOR decreasing; VBAT_UV > VBias 2.2 VBAT_OV V
VBAT_UV_HYST Battery under voltage threshold hysteresis, internal thershold VSTOR increasing 40 80 125 mV
VBAT_OK Programmable voltage range for threshold voltage for high to low transition of digital signal indicating battery is OK, VSTOR decreasing VBAT_UV VBAT_OV V
VBAT_OK_HYST Programmable voltage range for threshold voltage for low to high transition of digital signal indicating battery is OK, VSTOR increasing 50 VBAT_OV-VBAT_UV mV
VBAT_ACCURACY Overall Accuracy for threshold values, UV, OV, VBAT_OK Selected resistors are 0.1% tolerance –5% 5%
VBAT_OKH VBAT OK (High) threshold voltage Load = 10 µA VSTOR-200mV V
VBAT_OKL VBAT OK (Low) threshold voltage Load = 10 µA 100 mV
TSD_PROTL The temperature at which the boost converter is disabled and the switch between VBAT and VSTOR is disconnected to protect the battery OT_Prog = LO 65 °C
TSD_PROTH OT_Prog = HI 120
OT_Prog Voltage for OT_PROG High setting 2 V
Voltage for OT_PROG Low setting 0.3 V
BIAS and MPPT CONTROL STAGE
VOC_sample Sampling period of VIN_DC open circuit voltage 16 s
VOC_Settling Sampling period of VIN_DC open circuit voltage 256 ms
VIN_Reg Regulation of VIN_DC during charging 0.5 V <VIN < 3 V; IIN (DC) = 10 mA –10% 10%
VIN_shutoff DC input voltage into VIN_DC when charger is turned off 40 80 130 mV
MPPT_Disable Threshold on VOC_SAMP to disable MPPT functionality VSTOR-15 mV V
VBIAS Voltage node which is used as reference for the programmable voltage thresholds VIN_DC ≥ 0.5V; VSTOR ≥ 1.8 V 1.21 1.25 1.27 V