SLUSDU3 May   2021 BQ25720

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Power-Up Sequence
      2. 9.3.2  Vmin Active Protection (VAP) with Battery only
      3. 9.3.3  Two-Level Battery Discharge Current Limit
      4. 9.3.4  Fast Role Swap Feature
      5. 9.3.5  CHRG_OK Indicator
      6. 9.3.6  Input and Charge Current Sensing
      7. 9.3.7  Input Voltage and Current Limit Setup
      8. 9.3.8  Battery Cell Configuration
      9. 9.3.9  Device HIZ State
      10. 9.3.10 USB On-The-Go (OTG)
      11. 9.3.11 Converter Operation
      12. 9.3.12 Inductance Detection Through IADPT Pin
      13. 9.3.13 Converter Compensation
      14. 9.3.14 Continuous Conduction Mode (CCM)
      15. 9.3.15 Pulse Frequency Modulation (PFM)
      16. 9.3.16 Switching Frequency and Dithering Feature
      17. 9.3.17 Current and Power Monitor
        1. 9.3.17.1 High-Accuracy Current Sense Amplifier (IADPT and IBAT)
        2. 9.3.17.2 High-Accuracy Power Sense Amplifier (PSYS)
      18. 9.3.18 Input Source Dynamic Power Management
      19. 9.3.19 Input Current Optimizer (ICO)
      20. 9.3.20 Two-Level Adapter Current Limit (Peak Power Mode)
      21. 9.3.21 Processor Hot Indication
        1. 9.3.21.1 PROCHOT During Low Power Mode
        2. 9.3.21.2 PROCHOT Status
      22. 9.3.22 Device Protection
        1. 9.3.22.1 Watchdog Timer
        2. 9.3.22.2 Input Overvoltage Protection (ACOV)
        3. 9.3.22.3 Input Overcurrent Protection (ACOC)
        4. 9.3.22.4 System Overvoltage Protection (SYSOVP)
        5. 9.3.22.5 Battery Overvoltage Protection (BATOVP)
        6. 9.3.22.6 Battery Discharge Overcurrent Protection (BATOC)
        7. 9.3.22.7 Battery Short Protection (BATSP)
        8. 9.3.22.8 System Undervoltage Lockout (VSYS_UVP) and Hiccup Mode
        9. 9.3.22.9 Thermal Shutdown (TSHUT)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Forward Mode
        1. 9.4.1.1 System Voltage Regulation with Narrow VDC Architecture
        2. 9.4.1.2 Battery Charging
      2. 9.4.2 USB On-The-Go
      3. 9.4.3 Pass Through Mode (PTM)-Patented Technology
    5. 9.5 Programming
      1. 9.5.1 SMBus Interface
        1. 9.5.1.1 SMBus Write-Word and Read-Word Protocols
        2. 9.5.1.2 Timing Diagrams
    6. 9.6 Register Map
      1. 9.6.1  ChargeOption0 Register (SMBus address = 12h) [reset = E70Eh]
      2. 9.6.2  ChargeCurrent Register (SMBus address = 14h) [reset = 0000h]
        1. 9.6.2.1 Battery Pre-Charge Current Clamp
      3. 9.6.3  ChargeVoltage Register (SMBus address = 15h) [reset value based on CELL_BATPRESZ pin setting]
      4. 9.6.4  ChargerStatus Register (SMBus address = 20h) [reset = 0000h]
      5. 9.6.5  ProchotStatus Register (SMBus address = 21h) [reset = B800h]
      6. 9.6.6  IIN_DPM Register With 10-mΩ Sense Resistor (SMBus address = 22h) [reset = 4100h]
      7. 9.6.7  ADCVBUS/PSYS Register (SMBus address = 23h)
      8. 9.6.8  ADCIBAT Register (SMBus address = 24h)
      9. 9.6.9  ADCIINCMPIN Register (SMBus address = 25h)
      10. 9.6.10 ADCVSYSVBAT Register (SMBus address = 26h)
      11. 9.6.11 ChargeOption1 Register (SMBus address = 30h) [reset = 3300h]
      12. 9.6.12 ChargeOption2 Register (SMBus address = 31h) [reset = 00B7]
      13. 9.6.13 ChargeOption3 Register (SMBus address = 32h) [reset = 0434h]
      14. 9.6.14 ProchotOption0 Register (SMBus address = 33h) [reset = 4A81h(2S~) 4A09(1S)]
      15. 9.6.15 ProchotOption1 Register (SMBus address = 34h) [reset = 41A0h]
      16. 9.6.16 ADCOption Register (SMBus address = 35h) [reset = 2000h]
      17. 9.6.17 ChargeOption4 Register (SMBus address = 36h) [reset = 0048h]
      18. 9.6.18 Vmin Active Protection Register (SMBus address = 37h) [reset = 006Ch(2s~4s)/0004h(1s)]
      19. 9.6.19 OTGVoltage Register (SMBus address = 3Bh) [reset = 09C4h]
      20. 9.6.20 OTGCurrent Register (SMBus address = 3Ch) [reset = 3C00h]
      21. 9.6.21 InputVoltage (VINDPM) Register (SMBus address = 3Dh) [reset = VBUS-1.28V]
      22. 9.6.22 VSYS_MIN Register (SMBus address = 3Eh) [reset value based on CELL_BATPRESZ pin setting]
      23. 9.6.23 IIN_HOST Register (SMBus address = 3Fh) [reset = 4100h]
      24. 9.6.24 ID Registers
        1. 9.6.24.1 ManufactureID Register (SMBus address = FEh) [reset = 0040h]
        2. 9.6.24.2 Device ID (DeviceAddress) Register (SMBus address = FFh) [reset = 00E1h]
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 ACP-ACN Input Filter
        2. 10.2.2.2 Inductor Selection
        3. 10.2.2.3 Input Capacitor
        4. 10.2.2.4 Output Capacitor
        5. 10.2.2.5 Power MOSFETs Selection
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
      1. 12.2.1 Layout Example Reference Top View
      2. 12.2.2 Inner Layer Layout and Routing Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.6.14 ProchotOption0 Register (SMBus address = 33h) [reset = 4A81h(2S~) 4A09(1S)]

To set VSYS_TH1 threshold to trigger discharging VBUS in VAP mode, write a 6-bit Vmin Active Protection register command (REG0x33<7:2>()) using the data format listed in Figure 9-21, Table 9-32, and Table 9-33. The charger Measure on VSYS with fixed 5-µs deglitch time. Trigger when SYS pin voltage is below the thresholds. The threshold range from 3.2V(000000b) to 9.5V(111111b) for 2s~ and 3.2V(000000b) to 3.9V(000111b)for 1S, with 100-mV step resolution. There is a fixed DC offset which is 3.2V. Under 1S application writing beyond 3.9V will be ignored. For example 000111b and xxx111b result in same VSYS_TH1 setting 3.9V. Upon POR, the VSYS_TH1 threshold to trigger VBUS discharge in VAP mode is 3.4V(000010b) for 1S and 6.400V(100000b) for 2s~

Figure 9-21 ProchotOption0 Register (SMBus address = 33h) [reset = 4A81h(2S~) 4A09(1S)]
15 14 13 12 11 10 9 8
ILIM2_VTH ICRIT_DEG PROCHOT_VINDPM_80_90
R/W R/W R/W R/W R/W R/W R/W
7 6 5 4 3 2 1 0
VSYS_TH1 INOM_DEG LOWER_PROCHOT_VINDPM
R/W R/W R/W R/W R/W R/W R/W R/W
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
Table 9-32 ProchotOption0 Register (SMBus address = 33h) Field Descriptions
SMBus
BIT		 FIELD TYPE RESET DESCRIPTION
15-11 ILIM2_VTH R/W 01001b

ILIM2 Threshold

5 bits, percentage of IIN_DPM in 0x22H. Measure current between ACP and ACN.

Trigger when the current is above this threshold:

00001b - 11001b: 110% - 230%, step 5%

11010b - 11110b: 250% - 450%, step 50%

11111b: Out of Range (Ignored)

Default 150%, or 01001
10-9 ICRIT_DEG R/W 01b

ICRIT Deglitch time

ICRIT threshold is set to be 110% ofILIM2.

Typical ICRIT deglitch time to trigger PROCHOT.

00b: 15 µs

01b: 100 µs <default at POR>

10b: 400 µs

11b: 800 µs
8 PROCHOT_VINDPM_80_90 R/W 0b

Lower threshold of the PROCHOT_VINDPM comparator

When REG0x33[0]=1, the threshold of the PROCHOT_VINDPM comparator is determined by this bit setting.

0b: 83% of VinDPM threshold <default at POR>.

1b: 91% of VinDPM threshold
Table 9-33 ProchotOption0 Register (SMBus address = 33h) Field Descriptions
SMBus
BIT		 FIELD TYPE RESET DESCRIPTION
7-2 VSYS_TH1 R/W

100000b(2S~)

000010b(1S)

VSYS Threshold to trigger discharging VBUS in VAP mode.

Measure on VSYS with fixed 5-µs deglitch time. Trigger when SYS pin voltage is below the thresholds. There is a fixed DC offset which is 3.2V.

2S - battery(Default: 6.4V)

000000b- 111111b: 3.2V - 9.5V with 100mV step size.

1S battery(Default: 3.4V)

XXX000b - XXX111b: 3.2 V - 3.9V with 100mV step size.
1 INOM_DEG R/W 0b

INOM Deglitch Time

INOM is always 10% above IIN_DPM register setting. Measure current between ACP and ACN.

Trigger when the current is above this threshold.

0b: 1 ms(max) <default at POR>

1b: 60 ms(max)
0 LOWER_PROCHOT_VINDPM R/W 1b

Enable the lower threshold of the PROCHOT_VINDPM comparator

0b: the threshold of the PROCHOT_VINDPM comparator follows the same VINDPM REG0x3D() setting.

1b: the threshold of the PROCHOT_VINDPM comparator is lower and determined by PROCHOT_VINDPM_80_90 bit setting. <default at POR>