SLUSE31A April   2020  – February 2021 BQ25968

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Description (continued)
  6. Device Comparison Table
  7. Pin Configuration and Functions
  8. Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Charging System
      2. 9.3.2  Battery Charging Profile
      3. 9.3.3  Control State Diagram for System Implementation
      4. 9.3.4  Device Power Up
      5. 9.3.5  Switched Cap Function
        1. 9.3.5.1 Theory of Operation
      6. 9.3.6  Charging Start-Up
      7. 9.3.7  Integrated 16-Bit ADC for Monitoring and Smart Adapter Feedback
      8. 9.3.8  Device Internal Thermal Shutdown, TSBUS, and TSBAT Temperature Monitoring
      9. 9.3.9  INT Pin, STAT, FLAG, and MASK Registers
      10. 9.3.10 CDRVH and CDRVL_ADDRMS Functions
      11. 9.3.11 Parallel Operation Using Master and Slave Modes
    4. 9.4 Device Functional Modes
      1. 9.4.1 Device Modes and Protection Status
        1. 9.4.1.1 Input Overvoltage, Overcurrent, Undercurrent and Short-Circuit Protection
        2. 9.4.1.2 Battery Overvoltage and Overcurrent Protection
        3. 9.4.1.3 Cycle-by-Cycle Current Limit
    5. 9.5 Programming
      1. 9.5.1 F/S Mode Protocol
    6. 9.6 Register Maps
      1. 9.6.1 Customer Registers
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Standalone Application Information (for use with switching charger)
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Parallel BQ25968 for Higher Power Applications
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
        3. 10.2.2.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
      2. 13.1.2 Device Nomenclature
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

over operating free-air temperature range of –40°C to 85°C (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
SUPPLY CURRENTS
IQ_VBUSVBUS Operating Quiescent CurrentADC Disabled, Charge Disabled, OVPGATE not used285µA
ADC Disabled, Charge Disabled, OVPGATE used345µA
ADC Enabled (fastest mode), Charge Disabled400µA
ADC Enabled (slowest mode), Charge Disabled385µA
IQ_BATBattery Only Quiescent CurrentADC Disabled, Charge Disabled, VIN Not Present818µA
ADC Enabled (slowest mode), Charge Disabled, VBUS Not Present385µA
ADC Enabled (fastest mode), Charge Disabled, VBUS Not Present385µA
RESISTANCES
RQB_ONVBUS to PMID On ResistanceVBUS = 9 V68
RQCH1_ONOn resistance of QCH1VPMID = 9 V2227
RQDH1_ONOn resistance of QDH1CFLY = 4.5 V1016
RQCL1_ONOn resistance of QCL1VOUT = 4.5 V714
RQDL1_ONOn resistance of QDL1CFLY = 4.5 V814
RQCH2_ONOn resistance of QCH2VPMID = 9 V2227
RQDH2_ONOn resistance of QDH2CFLY = 4.5 V1016
RQCL2_ONOn resistance of QCL2VOUT = 4.5 V714
RQDL2_ONOn resistance of QDL2CFLY = 4.5 V814
RVBUS_PDVBUS pull-down resistance6
RVAC_PDVAC pull-down resistance130Ω
INTERNAL THRESHOLDS
VBUSUVLORisingVBUS Rising3.3V
VACUVLORisingVAC Rising3.3V
Falling Hysteresis300mV
VOVPGATEExternal FET Gate Drive Voltage, Measured from Gate to Source, with minimum 8 nF CGSVAC = 8 V10V
VOUTUVLORising2.3V
Falling Hysteresis100mV
VACPRESENTRising3.5V
Falling Hysteresis300mV
VBUSPRESENTRising2.85V
Falling Hysteresis500mV
VOUTPRESENTRising2.32.85V
Falling Hysteresis100mV
TSHUTRising Internal (TJ) Shutdown150°C
Falling Hysteresis30°C
PROTECTION and ALARMS THRESHOLD AND ACCURACY
VOUTOVPVOUT OVP rising threshold4.84.95V
VDROPVDROP rising thresholdAdjustable in Register 0x05h, bit 4 = 0300mV
VDROPVDROP rising thresholdAdjustable in Register 0x05h, bit 4 = 1400mV
VBATOVPVBAT Over-Voltage RangeAdjustable in Register 0x00h4.24.65V
VBAT Over-Voltage Step Size10mV
VBAT Over-Voltage Accuracy–1%1%
VBAT_ALMVBAT Alarm RangeAdjustable in Register 0x01h4.24.65V
VBAT Alarm Step Size25mV
VBAT Alarm HysteresisFalling50mV
VBAT Alarm Comparator AccuracyFrom VBAT = 3.5 V to 4.4 V–0.4%0.4%
IBAT_OCPIBAT_OCP RangeAdjustable in Register 0x02h010A
IBAT_OCP Step Size50mA
IBAT_OCP Comparator AccuracyIBAT = 6 A–5%5%
IBATOCP_ALMIBATOCP_ALM RangeAdjustable in Register 0x03h010A
IBATOCP_ALM Step Size50mA
IBATOCP_ALM HysteresisFalling50mA
IBATOCP_ALM Comparator AccuracyIBAT = 6 A and 9 A–1%1%
IBATUCP_ALMIBATUCP_ALM RangeAdjustable in Register 0x04h010A
IBATUCP_ALM Step Size50mA
IBAT_UCP_ALM HysteresisRising50mA
IBATUCP_ALM Comparator AccuracyIBAT = 3 A–2%2%
VVAC_OVPVAC_OVP RangeAdjustable in Register 0x05h6.517V
VAC_OVP Step SizeStep size valid for 11 V through 17 V only1V
VAC_OVP Comparator AccuracyAccuracy for 6.5 V–2%2%
VAC_OVP Comparator AccuracyAccuracy for 11 V through 17 V–2%2%
VBUS_OVPVBUS_OVP RangeAdjustable in Register 0x06h, 250 mV typical hysteresis612.35V
VBUS_OVP Step Size50mV
VBUS_OVP Comparator AccuracyVBUS = 10 V–1%1%
VBUSOVP_ALMVBUSOVP_ALM RangeAdjustable in Register 0x07h612.35mV
VBUSOVP_ALM Step Size50mV
VBUSOVP_ALM HysteresisFalling50mV
VBUSOVP_ALM Comparator Accuracy–0.5%0.5%
IBUS_OCPIBUS_OCP RangeAdjustable in Register 0x08h04.75A
IBUS_OCP Step Size50mA
IBUS_OCP Comparator Accuracy3 A–5%5%
IBUS_UCPIBUS_UCP Rising, IBAT must reach this value before the SS timeout or Switching Stops, Protection disabled until IBUS Current Reaches this ValueAdjustable in Register 0x2Bh, bit 2 = 0300375mA
IBUS_UCPIBUS_UCP Rising, IBAT must reach this value before the SS timeout or Switching Stops, Protection disabled until IBUS Current Reaches this ValueAdjustable in Register 0x2Bh, bit 2 = 1500575mA
IBUS_UCPIBUS_UCP Falling, Switching stops when IBUS current reaches this valueAdjustable in Register 0x2Bh, bit 2 = 010150 mA
IBUS_UCP Falling, Switching stops when IBUS current reaches this valueAdjustable in Register 0x2Bh, bit 2 = 1100250mA
IBUSOCP_ALMIBUSOCP_ALM RangeAdjustable in Register 0x09h04.95A
IBUSOCP_ALM Step Size50mA
IBUSOCP_ALM HysteresisFalling50mA
IBUSOCP_ALM Comparator AccuracyIBUS = 3 A (0°C to 85°C)–4%4%
TSBAT_FLT TSBUS_FLTTSBUS and TSBAT voltage range0%75%
TSBUS and TSBAT Threshold Step Size0%0.1953%
TSBUS and TSBAT Comparator Accuracy–1%1%
TSBUS and TSBAT Falling Hysteresis4%
TIMINGS
fSWSwitching FrequencyRegister set to 500 kHz in Register 0x0Bh500kHz
tVAC_OVPVAC OVP reaction time0.1µs
tVOUT_OVPVAC OVP reaction time5.5µs
tVAC_PDVAC Pulldown duration400ms
tVBUS_OVPVBUS OVP reaction time (Note: The deglitch time is increased during regulation)Not in regulation1µs
tIBUS_OCPIBUS OCP reaction time (Note: The deglitch time is increased during regulation)Not in regulation75µs
tIBUS_UCPIBUS UCP falling reaction time (Note: The deglitch time is increased during regulation)Not in regulation. Adjustable in Register 0x2Eh, bit 4 = 010µs
tIBUS_UCPIBUS UCP falling reaction time (Note: The deglitch time is increased during regulation)Not in regulation. Adjustable in Register 0x2Eh, bit 4 = 110ms
tVDROPVDROP rising threshold deglitch (Note: The deglitch time is increased during regulation)Not in regulation. Adjustable in Register 0x2Eh, bit 3 = 010µs
tVDROPVDROP rising threshold deglitch (Note: The deglitch time is increased during regulation)Not in regulation. Adjustable in Register 0x2Eh, bit 3 = 15ms
tVBAT_OVPVBAT OVP reaction time0µs
Deglitch during regulation5ms
tVOUT_OVPVOUT OVP reaction time4µs
tIBAT_OCPIBAT OCP reaction time500µs
Deglitch during regulation5ms
tINTDuration that INT is pulled low when an event occurs256µs
tREG_TIMEOUTIf the part is in regulation, but below VDROP_OVP for this amount of time, the part will stop switching.650ms
tINT_REG_DGLDeglitch when INT is pulled low after an event occursRising100ms
Falling5ms
TALM_DEBOUNCETime between consecutive faults for ALM indication120ms
tBUS_DETACHIBUS threshold reaction time1µs
ADC MEASUREMENT ACCURACY AND PERFORMANCE
tADC_CONVConversion Time, Each MeasurementADC_SAMPLE[1:0] = 0024ms
ADC_SAMPLE[1:0] = 0112
ADC_SAMPLE[1:0] = 106
ADC_SAMPLE[1:0] = 113
ADCRESEffective Resolution (0°C to 85°C)ADC_SAMPLE[1:0] = 0014bits
ADC_SAMPLE[1:0] = 0113
ADC_SAMPLE[1:0] = 1012
ADC_SAMPLE[1:0] = 1111
ADC MEASUREMENT RANGES AND LSB
IBUS_ADCADC Bus Current Readable in Registers 0x16h and 0x17hRange05A
LSB1mA
IBUS_ADCADC Accuracy1.5 A (0°C to 85°C)–5%5%
IBUS_ADCADC Accuracy3 A (0°C to 85°C)–5%5%
VBUS_ADCADC Bus Voltage Readable in Registers 0x18h and 0x19hRange014V
LSB1mV
VBUS_ADCADC Bus VoltageAccuracy for 8V, ADC_RATE = 00–0.%5 0.5%
VAC_ADCADC VAC Voltage Readable in Registers 0x1Ah and 0x1BhRange014V
LSB1mV
VAC_ADCADC VAC VoltageAccuracy for 8 V, ADC_RATE = 00–0.5% 0.5%
VOUT_ADCADC Output Voltage Readable in Registers 0x1Ch and 0x1DhRange05V
LSB1mV
VOUT_ADCADC Output VoltageAccuracy for 4 V, ADC_RATE = 00–0.5% 0.5%
VBAT_ADCADC Battery Voltage Readable in Registers 0x1Eh and 0x1FhRange05V
LSB1mV
VBAT_ADCADC Battery VoltageAccuracy for 3.5 V through 4.4 V, ADC_RATE = 00–0.4% 0.2%
IBAT_ADCADC Battery Current Readable in Registers 0x20h and 0x21hRange010A
LSB with 2 mΩ RSENSE1mA
IBAT_ADCADC Battery Current3 A–2% 2%
IBAT_ADCADC Battery Current6 A–1.5% 1.5%
IBAT_ADCADC Battery Current9 A–1.5% 1.5%
TSBUS_ADCADC TSBUS pin voltageRange0.22.7V
TSBUS_ADCADC TSBUS % of VOUT Readable in Registers 0x22h and 0x23hRange0%50%
LSB0.09766%
TSBUS_ADCADC TSBUS AccuracyTSBUS pin voltage 2 V–1% 1%
TSBAT_ADCADC TSBAT pin voltageRange0.22.7V
TSBAT_ADCADC TSBAT pin voltage Readable in Registers 0x24h and 0x25hRange0%50%
LSB0.09766%
TSBAT_ADCADC TSBAT pin voltageTSBAT pin voltage 2 V–1% 1%
TDIE_ADCADC Die Temperature Readable in Registers 0x26h and 0x27hRange–40150°C
LSB0.5°C
TDIE_ADCADC Die Temperature (Typ over temp)±4°C
REGN LDO
VREGNREGN LDO Output VoltageVBUS = 8 V5V
IREGNREGN LDO Current LimitVBUS = 8 V, VREGN = 4.5 V50mA
LOGIC I/O THRESHOLDS ( INT, BATP_SYNCIN)
VILInput Low ThresholdISINK = 5 mA0.4V
VIHInput High ThresholdISINK = 5 mA1.3V
ILEAKHigh Level Leakage CurrentVPULL-UP = 3.3 V1µA
LOGIC I/O THRESHOLDS (TSBAT_SYNCOUT)
VOHOutput High ThresholdVPULL-UP = 1.8V1.3
VOLOutput Low ThresholdVPULL-UP = 1.8V0.4
I2C LEVELS and TIMINGS
VILInput Low ThresholdVPULL-UP = 1.8 V, SDA and SCL0.4V
VIHInput High ThresholdVPULL-UP = 1.8 V, SDA and SCL1.3V
VOLOutput Low ThresholdIOL = 20 mA0.4V
IBIASHigh Level Leakage CurrentVPULL-UP = 1.8 V, SDA and SCL1µA
fSCLSCL Clock Frequency1MHz
tSU_STAData Set-Up Time10ns
tHD_DATData Hold Time070ns
trDARise Time of SDA SignalCbus = 100 pF max1080ns
tfDAFall Time of SDA SignalCbus = 100 pF max1080ns