SLUSCU0J March   2018  – March 2022 BQ77915

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
      1. 9.1.1 Device Functionality Summary
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Protection Summary
      2. 9.3.2  Fault Operation
        1. 9.3.2.1  Operation in OV
        2. 9.3.2.2  Operation in UV
        3. 9.3.2.3  Operation in OW
        4. 9.3.2.4  Operation in OCD1
        5. 9.3.2.5  Operation in OCD2
        6. 9.3.2.6  Programming the OCD1/2 Delay Using the OCDP Pin
        7. 9.3.2.7  Operation in SCD
        8. 9.3.2.8  Operation in OCC
        9. 9.3.2.9  Overcurrent Recovery Timer
        10. 9.3.2.10 Load Detection and Load Removal Detection
        11. 9.3.2.11 Operation in OTC
        12. 9.3.2.12 Operation in OTD
        13. 9.3.2.13 Operation in UTC
        14. 9.3.2.14 Operation in UTD
      3. 9.3.3  Protection Response and Recovery Summary
      4. 9.3.4  Cell Balancing
      5. 9.3.5  HIBERNATE Mode Operation
      6. 9.3.6  Configuration CRC Check and Comparator Built-In-Self-Test
      7. 9.3.7  Fault Detection Method
        1. 9.3.7.1 Filtered Fault Detection
      8. 9.3.8  State Comparator
      9. 9.3.9  DSG FET Driver Operation
      10. 9.3.10 CHG FET Driver Operation
      11. 9.3.11 External Override of CHG and DSG Drivers
      12. 9.3.12 Configuring 3-Series, 4-Series, or 5-Series Modes
      13. 9.3.13 Stacking Implementations
      14. 9.3.14 Zero-Volt Battery Charging Inhibition
    4. 9.4 Device Functional Modes
      1. 9.4.1 Power Modes
        1. 9.4.1.1 Power On Reset (POR)
        2. 9.4.1.2 NORMAL Mode
        3. 9.4.1.3 FAULT Mode
        4. 9.4.1.4 HIBERNATE Mode
        5. 9.4.1.5 SHUTDOWN Mode
        6. 9.4.1.6 Customer Fast Production Test Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Recommended System Implementation
        1. 10.1.1.1 CHG and DSG FET Rise and Fall Time
        2. 10.1.1.2 Protecting CHG and LD
        3. 10.1.1.3 Protecting the CHG FET
        4. 10.1.1.4 Using Load Detect for UV Fault Recovery
        5. 10.1.1.5 Temperature Protection
        6. 10.1.1.6 Adding RC Filters to the Sense Resistor
        7. 10.1.1.7 Using the State Comparator in an Application
          1. 10.1.1.7.1 Examples
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Design Example
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Third-Party Products Disclaimer
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Device Comparison Table

Unless otherwise specified, the device has, by default, a state comparator enabled with a 1.875-mV threshold. A filtered fault detection is used by default.

Table 6-1 Device Comparison Table
Part Number OV UV OW OCD1 OCD2 SCD OCC
Thre-shold (mV) Delay (s) Hyst (mV) Thre-shold (mV) Delay (s) Hyst (mV) Load Remo-val Reco-very (Y/N) Current (nA) Thre-shold (mV) Delay (ms) Threshold (mV) Delay (ms) Threshold (mV) Delay (ms) Threshold (mV)
BQ7791500 4200 1 200 2900 1 400 Y 100 60 180 60 180 120 0.96 60
BQ7791501 4250 1 200 2800 1 400 Y 100 35 180 60 180 120 0.96 20
BQ7791502 4200 1 200 2900 1 400 Y 100 70 180 70 180 120 0.96 70
BQ7791504 4275 1 100 2000 1 200 N Disabled
BQ7791506 3800 1 200 2500 1 400 Y 100 50 700 100 350 300 0.4 60
BQ7791508 4200 4.5 100 3000 4.5 200 Y 100 70 1420 140 700 300 0.4 60
BQ7791513 4300 4.5 100 1800 9 200 N Disabled
Table 6-2 Device Comparison Table (continued)
Part Number Current Fault Recovery Temperature (°C)(1) Cell Balancing
Delay (ms) Method OTD OTC UTD UTC VSTART (V) VHYST (VOV – VFC) (mV) VSTEP (VCBTH – VCBTL)
(mV)
BQ7791500 N/A Load removal only (OCD1, OCD2, SCD)/load detection only (OCC) 65 45 –10 0 3.8 100 100
BQ7791501 N/A Load removal only (OCD1, OCD2, SCD)/load detection only (OCC) 70 50 –20 0 3.8 100 100
BQ7791502 N/A Load removal only (OCD1, OCD2, SCD)/load detection only (OCC) 65 45 –10 0 3.8 100 100
BQ7791504 Disabled N/A Disabled 3.5 50 50
BQ7791506 N/A Load removal only (OCD1, OCD2, SCD)/load detection only (OCC) 65 50 –10 0 3.5 100 50
BQ7791508 500 Load removal only (OCD1, OCD2, SCD)/load detection only (OCC) 65 50 –20 –5 3.8 100 50
BQ7791513 Disabled N/A Disabled 3.8 150 50
(1) These thresholds are targets, based on temperature, but they are dependent on external components that could vary based on customer selection. The circuit is based on a 103AT NTC thermistor connected to TS and VSS, and a 10-kΩ resistor connected to VTB and TS. Actual thresholds must be determined in mV; refers to the overtemperature and undertemperature mV threshold in the Electrical Characteristics table.