3 Description

This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

Typical Part Dimensions

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	12		V
Q_g	Gate Charge Total (4.5 V)	0.91		nC
Q_gd	Gate Charge Gate-to-Drain	0.15		nC
R_DS(on)	Drain-to-Source On Resistance	V_GS = 1.8 V	96	mΩ
		V_GS = 2.5 V	73
		V_GS = 4.5 V	63
V_GS(th)	Threshold Voltage	0.85		V

Device Information⁽¹⁾

DEVICE	QTY	MEDIA	PACKAGE	SHIP
CSD13380F3	3000	7-Inch Reel	Femto 0.73 mm × 0.64 mm Land Grid Array (LGA)	Tape and Reel
CSD13380F3T	250	7-Inch Reel	Femto 0.73 mm × 0.64 mm Land Grid Array (LGA)	Tape and Reel

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C (unless otherwise stated)		VALUE	UNIT
V_DS	Drain-to-Source Voltage	12	V
V_GS	Gate-to-Source Voltage	8	V
I_D	Continuous Drain Current⁽¹⁾	3.6	A
I_D	Continuous Drain Current⁽²⁾	2.1	A
I_DM	Pulsed Drain Current⁽²⁾⁽³⁾	13.5	A
P_D	Power Dissipation⁽¹⁾	1.4	W
P_D	Power Dissipation⁽²⁾	0.5	W
V_(ESD)	Human-Body Model (HBM)	3	kV
V_(ESD)	Charged-Device Model (CDM)	2	kV
T_J, T_stg	Operating Junction, Storage Temperature	–55 to 150	°C

(1) Max Cu, typical R_θJA = 90°C/W on 1-in² (6.45-cm²), 2-oz
(0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.

(2) Min Cu, typical R_θJA = 255°C/W.

(3) Pulse duration ≤ 100 μs, duty cycle ≤ 1%.

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