SLPS517B December   2014  – December 2017 CSD13383F4

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJC|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Specifications

Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 μA 12 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 9.6 V 1 µA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 10 V 10 µA
VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 μA 0.70 1.00 1.25 V
RDS(on) Drain-to-source on-resistance VGS = 2.5 V, IDS = 0.5 A 53 65
VGS = 4.5 V, IDS = 0.5 A 37 44
gfs Transconductance VDS = 6 V, IDS = 0.5 A 5.4 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 6 V,
ƒ = 1 MHz
224 291 pF
Coss Output capacitance 68 88 pF
Crss Reverse transfer capacitance 47 61 pF
RG Series gate resistance 240 Ω
Qg Gate charge total (4.5 V) VDS = 6 V, IDS = 0.5 A 2.0 2.6 nC
Qgd Gate charge gate-to-drain 0.6 nC
Qgs Gate charge gate-to-source 0.4 nC
Qg(th) Gate charge at Vth 0.1 nC
Qoss Output charge VDS = 6 V, VGS = 0 V 0.9 nC
td(on) Turn on delay time VDS = 6 V, VGS = 4.5 V,
IDS = 0.5 A, RG = 2 Ω
46 ns
tr Rise time 122 ns
td(off) Turn off delay time 250 ns
tf Fall time 290 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 0.5 A, VGS = 0 V 0.7 1.0 V

Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJA Junction-to-ambient thermal resistance(1) 90 °C/W
Junction-to-ambient thermal resistance(2) 250
Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
Device mounted on FR4 material with minimum Cu mounting area.

Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD13383F4 D001_SLPS411.gif
Figure 1. Transient Thermal Impedance
CSD13383F4 D002_SLPS517.gif
Figure 2. Saturation Characteristics
CSD13383F4 D004_SLPS517.gif
ID = 0.5 A VDS = 6 V
Figure 4. Gate Charge
CSD13383F4 D006_SLPS517.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD13383F4 D008_SLPS517.gif
ID = 0.5 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD13383F4 D010_SLPS517.gif
Single Pulse, Typ RθJA = 250°C/W
Figure 10. Maximum Safe Operating Area (SOA)
CSD13383F4 D012_SLPS517_r2.gif
Figure 12. Maximum Drain Current vs Temperature
CSD13383F4 D003_SLPS517.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD13383F4 D005_SLPS517.gif
Figure 5. Capacitance
CSD13383F4 D007_SLPS517.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD13383F4 D009_SLPS517_rev2.gif
Figure 9. Typical Diode Forward Voltage
CSD13383F4 D011_SLPS517.gif
Figure 11. Single Pulse Unclamped Inductive Switching