SLPS218D August   2009  – October 2023 CSD16325Q5

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5.   Revision History
  6. 4Electrical Characteristics
  7. 5Thermal Characteristics
  8. 6Typical MOSFET Characteristics
  9. 7Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Static Characteristics
BVDSSDrain to Source VoltageVGS = 0 V, ID = 250 μA25V
IDSSDrain to Source Leakage CurrentVGS = 0 V, VDS = 20 V1μA
IGSSGate to Source Leakage CurrentVDS = 0 V, VGS = +10/–8 V100nA
VGS(th)Gate to Source Threshold VoltageVDS = VGS, ID = 250 μA0.91.11.4V
RDS(on)Drain to Source On ResistanceVGS = 3 V, ID = 30 A2.12.9mΩ
VGS = 4.5 V, ID = 30 A1.72.2mΩ
VGS = 8 V, ID = 30 A1.52mΩ
gfsTransconductanceVDS = 15 V, ID = 30 A159S
Dynamic Characteristics
CissInput CapacitanceVGS = 0 V, VDS = 12.5 V,
ƒ = 1 MHz
30704000pF
CossOutput Capacitance21902850pF
CrssReverse Transfer Capacitance120150pF
RGSeries Gate Resistance1.63.2
QgGate Charge Total (4.5 V)VDS = 12.5 V,
IDS = 30 A
1825nC
QgdGate Charge – Gate to Drain3.5nC
QgsGate Charge – Gate to Source6.6nC
Qg(th)Gate Charge at Vth3.3nC
QossOutput ChargeVDS = 13 V, VGS = 0 V43nC
td(on)Turn On Delay TimeVDS = 12.5 V, VGS = 4.5 V,
IDS = 30 A, RG =2 Ω
10.5ns
trRise Time16ns
td(off)Turn Off Delay Time32ns
tfFall Time12ns
Diode Characteristics
VSDDiode Forward VoltageIDS = 30 A, VGS = 0 V0.81V
QrrReverse Recovery ChargeVDD = 10 V, IF = 30 A, di/dt = 300 A/μs63nC
trrReverse Recovery TimeVDD = 10 V, IF = 30 A, di/dt = 300 A/μs47ns