SLPS411E April   2013  – December 2017 CSD17381F4

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJC|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Specifications

Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, IDS = 250 μA 30 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 24 V 100 nA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 10 V 50 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, IDS = 250 μA 0.65 0.85 1.10 V
RDS(on) Drain-to-Source On-Resistance VGS = 1.8 V, IDS =0.5 A 160 250
VGS = 2.5 V, IDS =0.5 A 110 143
VGS = 4.5 V, IDS = 0.5 A 90 117
VGS = 8 V, IDS =0.5 A 84 109
gfs Transconductance VDS = 15 V, IDS = 0.5 A 4.8 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 15 V,
ƒ = 1 MHz
150 195 pF
Coss Output Capacitance 44 57 pF
Crss Reverse Transfer Capacitance 2.2 2.9 pF
RG Series Gate Resistance 23 Ω
Qg Gate Charge Total (4.5 V) VDS = 15 V, IDS = 0.5 A 1040 1350 pC
Qgd Gate Charge Gate-to-Drain 133 pC
Qgs Gate Charge Gate-to-Source 226 pC
Qg(th) Gate Charge at Vth 150 pC
Qoss Output Charge VDS = 15 V, VGS = 0 V 1110 pC
td(on) Turn On Delay Time VDS = 15 V, VGS = 4.5 V,
IDS = 0.5 A,RG = 2 Ω
3.4 ns
tr Rise Time 1.4 ns
td(off) Turn Off Delay Time 10.8 ns
tf Fall Time 3.6 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 0.5 A, VGS = 0 V 0.73 0.9 V
Qrr Reverse Recovery Charge VDS= 15 V, IF = 0.5 A, di/dt = 300 A/μs 1500 pC
trr Reverse Recovery Time 5.6 ns

Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC TYPICAL VALUES UNIT
RθJA Junction-to-Ambient Thermal Resistance(1) 90 °C/W
Junction-to-Ambient Thermal Resistance(2) 250
Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
Device mounted on FR4 material with minimum Cu mounting area.

Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD17381F4 D001_SLPS411.gif
Figure 1. Transient Thermal Impedance
CSD17381F4 graph02_SLPS411.png
Figure 2. Saturation Characteristics
CSD17381F4 graph04_SLPS411.png
Figure 4. Gate Charge
CSD17381F4 graph06_SLPS411.png
Figure 6. Threshold Voltage vs Temperature
CSD17381F4 graph08_SLPS411.png
Figure 8. Normalized On-State Resistance vs Temperature
CSD17381F4 D010_SLPS411.gif
Single Pulse Typical RθJA =250ºC/W (min Cu)
Figure 10. Maximum Safe Operating Area
CSD17381F4 graph12_SLPS411_p2.png
Figure 12. Maximum Drain Current vs Temperature
CSD17381F4 graph03_SLPS411.png
Figure 3. Transfer Characteristics
CSD17381F4 graph05_SLPS411.png
Figure 5. Capacitance
CSD17381F4 graph07_SLPS411_p2.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD17381F4 graph09_SLPS411.png
Figure 9. Typical Diode Forward Voltage
CSD17381F4 graph11_SLPS411.png
Figure 11. Single Pulse Unclamped Inductive Switching