SLPS550C May   2015  – December 2019 CSD17484F4

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJJ|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 μA 30 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 24 V 100 nA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 12 V 50 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 μA 0.65 0.85 1.10 V
RDS(on) Drain-to-source on-resistance VGS = 1.8 V, IDS = 0.5 A 170 270 mΩ
VGS = 2.5 V, IDS = 0.5 A 125 160
VGS = 4.5 V, IDS = 0.5 A 107 128
VGS = 8 V, IDS = 0.5 A 99 121
gfs Transconductance VDS = 15 V, IDS = 0.5 A 4 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 15 V,
ƒ = 1 MHz
150 195 pF
Coss Output capacitance 44 57 pF
Crss Reverse transfer capacitance 2.2 2.9 pF
RG Series gate resistance 8
Qg Gate charge total (4.5 V) VDS = 15 V, IDS = 0.5 A 920 1200 pC
Qg Gate charge total (8.0 V) 1570 2040 pC
Qgd Gate charge gate-to-drain 75 pC
Qgs Gate charge gate-to-source 280 pC
Qg(th) Gate charge at Vth 140 pC
Qoss Output charge VDS = 15 V, VGS = 0 V 1400 pC
td(on) Turnon delay time VDS = 15 V, VGS = 4.5 V,
IDS = 0.5 A, RG = 2 Ω
3 ns
tr Rise time 1 ns
td(off) Turnoff delay time 11 ns
tf Fall time 4 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 0.5 A, VGS = 0 V 0.73 0.9 V
Qrr Reverse recovery charge VDS= 15 V, IF = 0.5 A, di/dt = 300 A/μs 1300 pC
trr Reverse recovery time 6.2 ns