SLPS367B August   2012  – July 2014 CSD18502KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 40 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 32 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 1.5 1.8 2.1 V
RDS(on) Drain-to-Source On Resistance VGS = 4.5 V, ID = 100 A 3.3 4.3
VGS = 10 V, ID = 100 A 2.4 2.9
gƒs Transconductance VDS = 20 V, ID = 100 A 138 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 20 V, ƒ = 1 MHz 3900 4680 pF
Coss Output Capacitance 900 1080 pF
Crss Reverse Transfer Capacitance 21 26 pF
RG Series Gate Resistance 1.2 2.4 Ω
Qg Gate Charge Total (4.5 V) VDS = 20 V, ID = 100 A 25 30 nC
Qg Gate Charge Total (10 V) 52 62 nC
Qgd Gate Charge Gate-to-Drain 8.4 nC
Qgs Gate Charge Gate-to-Source 10.3 nC
Qg(th) Gate Charge at Vth 7.5 nC
Qoss Output Charge VDS = 20 V, VGS = 0 V 52 nC
td(on) Turn On Delay Time VDS = 20 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω
11 ns
tr Rise Time 7.3 ns
td(off) Turn Off Delay Time 33 ns
tƒ Fall Time 9.3 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 100 A, VGS = 0 V 0.8 1 V
Qrr Reverse Recovery Charge VDS= 20 V, IF = 100A,
di/dt = 300A/μs
105 nC
trr Reverse Recovery Time 48 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance 0.6 °C/W
RθJA Junction-to-Ambient Thermal Resistance 62

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
graph01_SLPS361B.png
Figure 1. Transient Thermal Impedance
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Figure 2. Saturation Characteristics
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Figure 3. Transfer Characteristics
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Figure 4. Gate Charge
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Figure 6. Threshold Voltage vs. Temperature
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Figure 8. Normalized On-State Resistance vs. Temperature
graph10_SLPS367B.png
Figure 10. Maximum Safe Operating Area
graph12_SLPS367B.png
Figure 12. Maximum Drain Current vs. Temperature
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Figure 5. Capacitance
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Figure 7. On-State Resistance vs. Gate-to-Source Voltage
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Figure 9. Typical Diode Forward Voltage
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Figure 11. Single Pulse Unclamped Inductive Switching