SLPS358C June 2012 – June 2015 CSD18503Q5A
PRODUCTION DATA.
- 1Features
- 2Applications
- 3Description
- 4Revision History
- 5Specifications
- 6Device and Documentation Support
- 7Mechanical, Packaging, and Orderable Information
Package Options
Refer to the PDF data sheet for device specific package drawings
Mechanical Data (Package|Pins)
- DQJ|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information
1 Features
2 Applications
- DC-DC Conversion
- Secondary Side Synchronous Rectifier
- Battery Motor Control
3 Description
This 40 V, 3.4 mΩ, 5 x 6 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Top View
Text added for spacing
Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-source voltage | 40 | V | |
| Qg | Gate charge total (4.5 V) | 13 | nC | |
| Qgd | Gate charge gate-to-drain | 4.3 | nC | |
| RDS(on) | Drain-to-source on-resistance | VGS = 4.5 V | 4.7 | mΩ |
| VGS = 10 V | 3.4 | mΩ | ||
| VGS(th) | Threshold voltage | 1.8 | V | |
Ordering Information(1)
| DEVICE | QTY | MEDIA | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD18503Q5A | 2500 | 13-Inch Reel | SON 5 mm × 6 mm Plastic Package | Tape and Reel |
| CSD18503Q5AT | 250 | 7-Inch Reel |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-source voltage | 40 | V |
| VGS | Gate-to-source voltage | ±20 | V |
| ID | Continuous drain current (package limited), TC = 25°C | 100 | A |
| Continuous drain current (silicon limited), TC = 25°C | 121 | ||
| Continuous drain current, TA = 25°C(1) | 19 | ||
| IDM | Pulsed drain current, TA = 25°C(2) | 321 | A |
| PD | Power dissipation(1) | 3.1 | W |
| Power dissipation, TC = 25°C | 120 | ||
| TJ, Tstg |
Operating junction, Storage temperature |
–55 to 150 | °C |
| EAS | Avalanche energy, single pulse ID = 56 A, L = 0.1 mH, RG = 25 Ω |
157 | mJ |
