SLPS684 July 2017 CSD18511KTT
PRODUCTION DATA.
- 1Features
- 2Applications
- 3Description
- 4Revision History
- 5Specifications
- 6Device and Documentation Support
- 7Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
- KTT|2
Thermal pad, mechanical data (Package|Pins)
Orderable Information
1 Features
- Low Qg and Qgd
- Low RDS(ON)
- Low-Thermal Resistance
- Avalanche Rated
- Lead-Free Terminal Plating
- RoHS Compliant
- Halogen Free
- D2PAK Plastic Package
2 Applications
- Secondary Side Synchronous Rectifier
- Motor Control
3 Description
This 40-V, 2.1-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 40 | V | |
| Qg | Gate Charge Total (10 V) | 63.9 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 9.7 | nC | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 3.2 | mΩ |
| VGS = 10 V | 2.1 | |||
| VGS(th) | Threshold Voltage | 1.8 | V | |
Device Information(1)
| DEVICE | QTY | MEDIA | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD18511KTT | 500 | 13-Inch Reel | D2PAK Plastic Package |
Tape and Reel |
| CSD18511KTTT | 50 |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 40 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | Continuous Drain Current (Package Limited) | 110 | A |
| Continuous Drain Current (Silicon Limited), TC = 25°C | 194 | ||
| Continuous Drain Current (Silicon Limited), TC = 100°C | 137 | ||
| IDM | Pulsed Drain Current(1) | 400 | A |
| PD | Power Dissipation | 188 | W |
| TJ, Tstg |
Operating Junction, Storage Temperature |
–55 to 175 | °C |
| EAS | Avalanche Energy, Single Pulse ID = 56 A, L = 0.1 mH, RG = 25 Ω |
156 | mJ |
- Max RθJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
RDS(on) vs VGS |
Gate Charge |