SLPS362C September   2012  – June 2015 CSD18533KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • TO-220 Plastic Package

2 Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Motor Control

3 Description

This 5.0 mΩ, 60 V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

SPACE

CSD18533KCS FET_Pins.gif
CSD18533KCS TO220p2.png

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-source voltage 60 V
Qg Gate charge total (10 V) 28 nC
Qgd Gate charge gate-to-drain 3.9 nC
RDS(on) Drain-to-source on-resistance VGS = 4.5 V 6.9 mΩ
VGS = 10 V 5.0 mΩ
VGS(th) Threshold voltage 1.9 V

Ordering Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD18533KCS 50 Tube TO-220 Plastic Package Tube
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-source voltage 60 V
VGS Gate-to-source voltage ±20 V
ID Continuous drain current (package limited) 100 A
Continuous drain current (silicon limited), TC = 25°C 118
Continuous drain current (silicon limited), TC = 100°C 84
IDM Pulsed drain current (1) 294 A
PD Power dissipation 192 W
TJ,
Tstg		 Operating junction,
Storage temperature 		–55 to 175 °C
EAS Avalanche energy, single pulse
ID = 52 A, L = 0.1 mH, RG = 25 Ω		 135 mJ
  1. Max RθJC = 0.8°C/W, pulse duration ≤100 μs, duty cycle ≤1%

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RDS(on) vs VGS

CSD18533KCS D007_SLPS362.gif

Gate Charge

CSD18533KCS D004_SLPS362_FP.gif