SLPS532A March   2015  – December 2017 CSD18536KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • TO-220 Plastic Package

Applications

  • Secondary Side Synchronous Rectifier
  • Motor Control

Description

This 60 V, 1.3 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

SPACE

CSD18536KCS FET_Pins.gif
CSD18536KCS TO220p2.png

.

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 60 V
Qg Gate Charge Total (10 V) 108 nC
Qgd Gate Charge Gate-to-Drain 14 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 1.7
VGS = 10 V 1.3
VGS(th) Threshold Voltage 1.8 V

Ordering Information(1)

Device Package Media Qty Ship
CSD18536KCS TO-220 Plastic Package Tube 50 Tube
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 60 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 200 A
Continuous Drain Current (Silicon limited), TC = 25°C 349
Continuous Drain Current (Silicon limited), TC = 100°C 247
IDM Pulsed Drain Current (1) 400 A
PD Power Dissipation 375 W
TJ,
Tstg
Operating Junction and
Storage Temperature Range
–55 to 175 °C
EAS Avalanche Energy, single pulse
ID = 128 A, L = 0.1 mH, RG = 25 Ω
819 mJ
  1. Max RθJC = 0.4°C/W, pulse duration ≤100 μs, duty cycle ≤1%.

RDS(on) vs VGS

CSD18536KCS D007_SLPS532.gif

Gate Charge

CSD18536KCS D004_SLPS588_FP.gif