SLPS532C July   2014  – March 2024 CSD18536KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Description

This 60V, 1.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

GUID-C7E4D8DB-5D30-4D65-AB16-328BE04936D0-low.gif GUID-9AA8AEEF-1B57-498B-9FAC-52FBC5DAB6A9-low.png
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 60 V
Qg Gate Charge Total (10V) 108 nC
Qgd Gate Charge Gate-to-Drain 14 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5V 1.7 mΩ
VGS = 10V 1.3 mΩ
VGS(th) Threshold Voltage 1.8 V
Ordering Information
Device(1)PackageMediaQtyShip
CSD18536KCSTO-220 Plastic PackageTube50Tube
For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°CVALUEUNIT
VDSDrain-to-Source Voltage60V
VGSGate-to-Source Voltage±20V
IDContinuous Drain Current (Package limited)200A
Continuous Drain Current (Silicon limited), TC = 25°C349
Continuous Drain Current (Silicon limited), TC = 100°C247
IDMPulsed Drain Current (1)400A
PDPower Dissipation375W
TJ,
Tstg
Operating Junction and
Storage Temperature Range
–55 to 175°C
EASAvalanche Energy, single pulse
ID = 128A, L = 0.1mH, RG = 25Ω
819mJ
Max RθJC = 0.4°C/W, pulse duration ≤100μs, duty cycle ≤1%.
GUID-BAAE55B3-2F63-47B1-8911-133EF3EE5C24-low.gif RDS(on) vs VGS
GUID-13DDBF83-F4AE-4958-BCC7-FAE2DD5621E6-low.gif Gate Charge