SLPS532A March   2015  – December 2017 CSD18536KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Specifications

Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 60 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 48 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 1.4 1.8 2.2 V
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V, ID = 100 A 1.7 2.2
VGS = 10 V, ID = 100 A 1.3 1.6
gfs Transconductance VDS = 6 V, ID = 100 A 312 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 30 V, ƒ = 1 MHz 8790 11430 pF
Coss Output Capacitance 1410 1840 pF
Crss Reverse Transfer Capacitance 39 51 pF
RG Series Gate Resistance 0.7 1.4 Ω
Qg Gate Charge Total (10 V) VDS = 30 V, ID = 100 A 108 140 nC
Qgd Gate Charge Gate-to-Drain 14 nC
Qgs Gate Charge Gate-to-Source 18 nC
Qg(th) Gate Charge at Vth 17 nC
Qoss Output Charge VDS = 30 V, VGS = 0 V 230 nC
td(on) Turn On Delay Time VDS = 30 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω
11 ns
tr Rise Time 5 ns
td(off) Turn Off Delay Time 24 ns
tf Fall Time 4 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 100 A, VGS = 0 V 0.9 1.0 V
Qrr Reverse Recovery Charge VDS= 30 V, IF = 100 A,
di/dt = 300 A/μs
323 nC
trr Reverse Recovery Time 86 ns

Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance 0.4 °C/W
RθJA Junction-to-Ambient Thermal Resistance 62

Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD18536KCS D001_SLPS532.png
Figure 1. Transient Thermal Impedance
CSD18536KCS D002_SLPS532.gif
Figure 2. Saturation Characteristics
CSD18536KCS D003_SLPS532.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD18536KCS D004_SLPS588.gif
VDS = 50 V ID = 100 A
Figure 4. Gate Charge
CSD18536KCS D006_SLPS532.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD18536KCS D008_SLPS532.gif
ID = 100 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD18536KCS D010_SLPS532.gif
Single Pulse Max RθJC = 0.4°C/W
Figure 10. Maximum Safe Operating Area
CSD18536KCS D012_SLPS532.gif
Figure 12. Maximum Drain Current vs Temperature
CSD18536KCS D005_SLPS588.gif
Figure 5. Capacitance
CSD18536KCS D007_SLPS532.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD18536KCS D009_SLPS532.gif
Figure 9. Typical Diode Forward Voltage
CSD18536KCS D011_SLPS532.gif
Figure 11. Single Pulse Unclamped Inductive Switching